Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design

2013 ◽  
Vol 60 (2) ◽  
pp. 767-770
Author(s):  
Chih Hua Chen ◽  
M.-H. Liao ◽  
Li Cheng Chang ◽  
Ssu Chieh Kao ◽  
M.-Y. Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Structure ◽  
Laser Treatment ◽  
Sapphire Substrate ◽  
Structure Design ◽  
Gan Film

Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN film

2013 ◽  
Vol 46 (6) ◽  
pp. 065104
Author(s):  
C-H Chen ◽  
M-H Liao ◽  
L-C Chang ◽  
S-C Kao ◽  
C Yang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Structure ◽  
Laser Treatment ◽  
Gan Film

Spatially resolved residual stress assessments of GaN film on sapphire substrate by cathodoluminescence piezospectroscopy

2008 ◽  
Vol 104 (2) ◽  
pp. 023514 ◽  
Author(s):  
Giuseppe Pezzotti ◽  
Alessandro Alan Porporati ◽  
Andrea Leto ◽  
Wenliang Zhu
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Spatially Resolved ◽  
Gan Film

scholarly journals Residual Stress of Curvature Sapphire Substrate with GaN Film Released by the Application of Trench Structures

2013 ◽  
Vol 3 (4) ◽  
pp. 239-243
Author(s):  
Liao Ming-Han ◽  
Lee Jyh-Jone ◽  
Chen Chih-Hua ◽  
Kao Ssu-Chieh ◽  
Chen Kuan-Chou ◽  
...  
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Gan Film

Hierarchical Nano/Micro-structured Surfaces with High Surface Area/Volume Ratios

2021 ◽  
pp. 1-36
Author(s):  
Ketki Lichade ◽  
Yizhou Jiang ◽  
Yayue Pan
Keyword(s):  
Surface Structure ◽  
Surface Area ◽  
Light Trapping ◽  
High Surface ◽  
High Surface Area ◽  
Three Dimensional ◽  
Structure Design ◽  
Surface Structures ◽  
Structured Surfaces ◽  
Design And Manufacture

Abstract Recently, many studies have investigated additive manufacturing of hierarchical surfaces with high surface area/volume (SA/V) ratios, and their performance has been characterized for applications in next-generation functional devices. Despite recent advances, it remains challenging to design and manufacture high SA/V ratio structures with desired functionalities. In this study, we established the complex correlations among the SA/V ratio, surface structure geometry, functionality, and manufacturability in the Two-Photon Polymerization (TPP) process. Inspired by numerous natural structures, we proposed a 3-level hierarchical structure design along with the mathematical modeling of the SA/V ratio. Geometric and manufacturing constraints were modeled to create well-defined three-dimensional hierarchically structured surfaces with a high accuracy. A process flowchart was developed to design the proposed surface structures to achieve the target functionality, SA/V ratio, and geometric accuracy. Surfaces with varied SA/V ratios and hierarchy levels were designed and printed. The wettability and antireflection properties of the fabricated surfaces were characterized. It was observed that the wetting and antireflection properties of the 3-level design could be easily tailored by adjusting the design parameter settings and hierarchy levels. Furthermore, the proposed surface structure could change a naturally-hydrophilic surface to near-superhydrophobic. Geometrical light trapping effects were enabled and the antireflection property could be significantly enhanced (>80% less reflection) by the proposed hierarchical surface structures. Experimental results implied the great potential of the proposed surface structures for various applications such as microfluidics, optics, energy, and interfaces.

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

Effect of treatments of sapphire substrate on growth of GaN film

2005 ◽  
Vol 244 (1-4) ◽  
pp. 269-272 ◽  
Author(s):  
Masatomo Sumiya ◽  
Shunro Fuke
Keyword(s):  
Sapphire Substrate ◽  
Gan Film

scholarly journals Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

2000 ◽  
Vol 88 (2) ◽  
pp. 1158-1165 ◽  
Author(s):  
M. Sumiya ◽  
K. Yoshimura ◽  
T. Ito ◽  
K. Ohtsuka ◽  
S. Fuke ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Growth Mode ◽  
Polar Direction ◽  
Gan Film
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