scholarly journals Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

2000 ◽  
Vol 88 (2) ◽  
pp. 1158-1165 ◽  
Author(s):  
M. Sumiya ◽  
K. Yoshimura ◽  
T. Ito ◽  
K. Ohtsuka ◽  
S. Fuke ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Growth Mode ◽  
Polar Direction ◽  
Gan Film

Initial Growth Mode of GaN Film on Stepped Sapphire

2007 ◽  
Vol 124-126 ◽  
pp. 61-64
Author(s):  
Min Su Yi ◽  
Tae Sik Cho ◽  
Hyun Hwi Lee
Keyword(s):  
Sapphire Substrate ◽  
Early Stage ◽  
Growth Mode ◽  
Atomic Step ◽  
Layer By Layer ◽  
Initial Growth ◽  
Nucleation Layer ◽  
X Ray ◽  
Metal Organic ◽  
Gan Film

The initial GaN growth mode on stepped sapphires by plasma enhanced metal organic molecular beam epitaxy (PEMOMBE) has been analyzed using in-situ, real time synchrotron x-ray diffraction and x-ray absorption. The sapphire substrate annealed at high temperature had flat terraces and regular atomic steps. The crystal quality and the vicinal angle of sapphire substrate had an effect on the width of terraces and the step arrangement. The initial growth mode of the GaN film on the regular atomic step (AS) surface was the layer-by-layer mode and changed to the 3D growth mode within 2 bilayer thickness. In the meanwhile, the growth mode of the GaN film grown on the sapphire with random roughness (RR) surface made the flat surface in the early stage and changed the 3D growth mode. As increasing the film thickness, the nucleation layer grows strain-free hexagonal GaN on stepped sapphires

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

scholarly journals Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films

2018 ◽  
pp. 1800523 ◽  
Author(s):  
Matthew A. Laurent ◽  
Stacia Keller ◽  
Umesh K. Mishra
Keyword(s):  
Surface Morphology ◽  
Comprehensive Analysis ◽  
Growth Mode

Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

2020 ◽  
Vol 518 ◽  
pp. 146218 ◽  
Author(s):  
Bin Tang ◽  
Hongpo Hu ◽  
Hui Wan ◽  
Jie Zhao ◽  
Liyan Gong ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Growth Mode ◽  
High Quality

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design

2013 ◽  
Vol 60 (2) ◽  
pp. 767-770
Author(s):  
Chih Hua Chen ◽  
M.-H. Liao ◽  
Li Cheng Chang ◽  
Ssu Chieh Kao ◽  
M.-Y. Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Structure ◽  
Laser Treatment ◽  
Sapphire Substrate ◽  
Structure Design ◽  
Gan Film

Spatially resolved residual stress assessments of GaN film on sapphire substrate by cathodoluminescence piezospectroscopy

2008 ◽  
Vol 104 (2) ◽  
pp. 023514 ◽  
Author(s):  
Giuseppe Pezzotti ◽  
Alessandro Alan Porporati ◽  
Andrea Leto ◽  
Wenliang Zhu
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Spatially Resolved ◽  
Gan Film

Effect of treatments of sapphire substrate on growth of GaN film

2005 ◽  
Vol 244 (1-4) ◽  
pp. 269-272 ◽  
Author(s):  
Masatomo Sumiya ◽  
Shunro Fuke
Keyword(s):  
Sapphire Substrate ◽  
Gan Film

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

1999 ◽  
Vol 150 (1-4) ◽  
pp. 161-170 ◽  
Author(s):  
H Dumont ◽  
L Auvray ◽  
J Dazord ◽  
Y Monteil ◽  
J Bouix ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Mode ◽  
Carrier Gas ◽  
Inp Surface
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