Effect of treatments of sapphire substrate on growth of GaN film

2005 ◽  
Vol 244 (1-4) ◽  
pp. 269-272 ◽  
Author(s):  
Masatomo Sumiya ◽  
Shunro Fuke
Keyword(s):  
Sapphire Substrate ◽  
Gan Film

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design

2013 ◽  
Vol 60 (2) ◽  
pp. 767-770
Author(s):  
Chih Hua Chen ◽  
M.-H. Liao ◽  
Li Cheng Chang ◽  
Ssu Chieh Kao ◽  
M.-Y. Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Structure ◽  
Laser Treatment ◽  
Sapphire Substrate ◽  
Structure Design ◽  
Gan Film

Spatially resolved residual stress assessments of GaN film on sapphire substrate by cathodoluminescence piezospectroscopy

2008 ◽  
Vol 104 (2) ◽  
pp. 023514 ◽  
Author(s):  
Giuseppe Pezzotti ◽  
Alessandro Alan Porporati ◽  
Andrea Leto ◽  
Wenliang Zhu
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Spatially Resolved ◽  
Gan Film

scholarly journals Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

2000 ◽  
Vol 88 (2) ◽  
pp. 1158-1165 ◽  
Author(s):  
M. Sumiya ◽  
K. Yoshimura ◽  
T. Ito ◽  
K. Ohtsuka ◽  
S. Fuke ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Growth Mode ◽  
Polar Direction ◽  
Gan Film

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

Modeling the curvature and interface shear stress of GaN-sapphire system

2016 ◽  
Vol 30 (08) ◽  
pp. 1650099
Author(s):  
Jia Li ◽  
Junjie Shi ◽  
Jiejun Wu ◽  
Huizhao Liu
Keyword(s):  
Shear Stress ◽  
Sapphire Substrate ◽  
Uniform Thickness ◽  
Interface Shear ◽  
Interface Shear Stress ◽  
Stress Changes ◽  
Circular System ◽  
Gan Film

The curvature and interface shear stress of GaN-sapphire system are studied by establishing the mechanical equations based on two main assumptions: (a) the thickness of GaN film can be compared to the thickness of sapphire substrate, and (b) the thickness of GaN film is non-uniform. Our results show that the curvature of GaN-sapphire system is a variable within the whole circular system. The interface shear stress changes direction around at the middle of radius for the circular system, and the curvature have an important effect on the interface shear stress due to the consideration of non-uniform thickness for GaN film.

Femtosecond laser inscription of Bragg gratings on a thin GaN film grown on a sapphire substrate

2018 ◽  
Vol 109 ◽  
pp. 68-72 ◽  
Author(s):  
Aviran Halstuch ◽  
Ohad Westreich ◽  
Noam Sicron ◽  
Amiel A. Ishaaya
Keyword(s):  
Femtosecond Laser ◽  
Sapphire Substrate ◽  
Bragg Gratings ◽  
Gan Film
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