Spatially resolved residual stress assessments of GaN film on sapphire substrate by cathodoluminescence piezospectroscopy

2008 ◽  
Vol 104 (2) ◽  
pp. 023514 ◽  
Author(s):  
Giuseppe Pezzotti ◽  
Alessandro Alan Porporati ◽  
Andrea Leto ◽  
Wenliang Zhu
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Spatially Resolved ◽  
Gan Film

Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design

2013 ◽  
Vol 60 (2) ◽  
pp. 767-770
Author(s):  
Chih Hua Chen ◽  
M.-H. Liao ◽  
Li Cheng Chang ◽  
Ssu Chieh Kao ◽  
M.-Y. Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Surface Structure ◽  
Laser Treatment ◽  
Sapphire Substrate ◽  
Structure Design ◽  
Gan Film

scholarly journals Residual Stress of Curvature Sapphire Substrate with GaN Film Released by the Application of Trench Structures

2013 ◽  
Vol 3 (4) ◽  
pp. 239-243
Author(s):  
Liao Ming-Han ◽  
Lee Jyh-Jone ◽  
Chen Chih-Hua ◽  
Kao Ssu-Chieh ◽  
Chen Kuan-Chou ◽  
...  
Keyword(s):  
Residual Stress ◽  
Sapphire Substrate ◽  
Gan Film

The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

1993 ◽  
Vol 128 (1-4) ◽  
pp. 384-390 ◽  
Author(s):  
T. Detchprohm ◽  
H. Amano ◽  
K. Hiramatsu ◽  
I. Akasaki
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Zno Buffer Layer ◽  
Gan Film

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

Effect of treatments of sapphire substrate on growth of GaN film

2005 ◽  
Vol 244 (1-4) ◽  
pp. 269-272 ◽  
Author(s):  
Masatomo Sumiya ◽  
Shunro Fuke
Keyword(s):  
Sapphire Substrate ◽  
Gan Film

scholarly journals Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

2000 ◽  
Vol 88 (2) ◽  
pp. 1158-1165 ◽  
Author(s):  
M. Sumiya ◽  
K. Yoshimura ◽  
T. Ito ◽  
K. Ohtsuka ◽  
S. Fuke ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Growth Mode ◽  
Polar Direction ◽  
Gan Film

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

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