Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs

2008 ◽  
Vol 55 (7) ◽  
pp. 1702-1707 ◽  
Author(s):  
Kenji Kajiwara ◽  
Yoshikata Nakajima ◽  
Tatsuro Hanajiri ◽  
Toru Toyabe ◽  
Takuo Sugano
1987 ◽  
Vol 51 (5) ◽  
pp. 343-345 ◽  
Author(s):  
J. Narayan ◽  
S. Y. Kim ◽  
K. Vedam ◽  
R. Manukonda

2009 ◽  
Vol 48 (3) ◽  
pp. 031201 ◽  
Author(s):  
Satoko Nakagawa-Toyota ◽  
Michio Tajima ◽  
Kazuyuki Hirose ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2004-2008 ◽  
Author(s):  
Yoshikata Nakajima ◽  
Hideki Tomita ◽  
Kenichi Aoto ◽  
Nobuhiro Ito ◽  
Tatsuro Hanajiri ◽  
...  

Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.


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