Characterization of a Non-Interdigitated Comb Drive

2018 ◽  
Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  
Keyword(s):  
Quality Factor ◽  
Fundamental Frequency ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Comb Drive ◽  
High Quality ◽  
Sensor Applications ◽  
Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

Fabrication and Characterization of High-Quality Factor GaN-Based Resonant-Cavity Blue Light-Emitting Diodes

2012 ◽  
Vol 24 (17) ◽  
pp. 1472-1474 ◽  
Author(s):  
Xiao-Long Hu ◽  
Wen-Jie Liu ◽  
Guo-En Weng ◽  
Jiang-Yong Zhang ◽  
Xue-Qin Lv ◽  
...  
Keyword(s):  
Quality Factor ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
High Quality Factor ◽  
High Quality ◽  
Light Emitting ◽  
Fabrication And Characterization

scholarly journals Fabrication and characterization of high-quality-factor silicon nitride nanobeam cavities

2011 ◽  
Vol 36 (3) ◽  
pp. 421 ◽  
Author(s):  
Mughees Khan ◽  
Thomas Babinec ◽  
Murray W. McCutcheon ◽  
Parag Deotare ◽  
Marko Lončar
Keyword(s):  
Silicon Nitride ◽  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Fabrication And Characterization ◽  
Nanobeam Cavities

scholarly journals Digitally-Controlled Bondwire Inductor with High Quality Factor and Wide Tuning Range

2020 ◽  
Vol 20 (3) ◽  
pp. 207-212
Author(s):  
Yonggoo Lee ◽  
Bomson Lee
Keyword(s):  
Quality Factor ◽  
Integrated Circuit ◽  
Tuning Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Wide Tuning Range ◽  
High Quality

A tunable bondwire inductor (TBI) with high-quality factor and wide tuning range is presented. The proposed TBI is fabricated on a single chip by combining a single-pole four-throw (SP4T) switch integrated circuit (IC) and four bondwire inductors on a package substrate. The SP4T switch IC is fabricated using 180 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The fabricated TBI chip exhibits a 521% tuning range of inductance from 1.77 to 11 nH at 0.1 GHz and a relatively high-quality factor. To the knowledge of the authors, the results of this work demonstrate the best combined performance of inductance tuning range and quality factor.

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