Short-Channel Characteristics of Self-Aligned $\Pi$-Shaped Source/Drain Ultrathin SOI MOSFETs

2008 ◽  
Vol 55 (6) ◽  
pp. 1480-1486 ◽  
Author(s):  
Jyi-Tsong Lin ◽  
Yi-Chuen Eng ◽  
Hau-Yuan Huang ◽  
Shiang-Shi Kang ◽  
Po-Hsieh Lin ◽  
...  
Keyword(s):  
Short Channel ◽  
Channel Characteristics ◽  
Ultrathin Soi

Short channel characteristics of quasi-single-drain MOSFETs

2001 ◽  
Vol 22 (7) ◽  
pp. 351-353 ◽  
Author(s):  
K. Sugihara ◽  
Y. Abe ◽  
T. Oishi ◽  
N. Miura ◽  
Y. Tokuda
Keyword(s):  
Short Channel ◽  
Channel Characteristics

Evolution of SOI MOSFETs: from Single Gate to Multiple Gates

2003 ◽  
Vol 765 ◽  
Author(s):  
Jean-Pierre Colinge
Keyword(s):  
Current Drive ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Channel Characteristics ◽  
Device Structures ◽  
History Of ◽  
Soi Technology

AbstractTo improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

2000 ◽  
Vol 47 (2) ◽  
pp. 354-359 ◽  
Author(s):  
E. Suzuki ◽  
K. Ishii ◽  
S. Kanemaru ◽  
T. Maeda ◽  
T. Tsutsumi ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Ultrathin Soi

Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs

1998 ◽  
Author(s):  
Toshiyuki Oishi ◽  
Katsuomi Shiozawa ◽  
Akihiko Furukawa ◽  
Yuji Abe ◽  
Yasunori Tokuda
Keyword(s):  
Edge Effect ◽  
Short Channel ◽  
Channel Characteristics

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

2010 ◽  
Vol 54 (2) ◽  
pp. 123-130 ◽  
Author(s):  
L. Pham-Nguyen ◽  
C. Fenouillet-Beranger ◽  
G. Ghibaudo ◽  
T. Skotnicki ◽  
S. Cristoloveanu
Keyword(s):  
Short Channel ◽  
Ultrathin Soi
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