Impact of shallow source/drain on the short-channel characteristics of pMOSFETs

1999 ◽  
Vol 20 (2) ◽  
pp. 95-96 ◽  
Author(s):  
H. Kurata ◽  
T. Sugii
Keyword(s):  
Short Channel ◽  
Channel Characteristics

Short channel characteristics of quasi-single-drain MOSFETs

2001 ◽  
Vol 22 (7) ◽  
pp. 351-353 ◽  
Author(s):  
K. Sugihara ◽  
Y. Abe ◽  
T. Oishi ◽  
N. Miura ◽  
Y. Tokuda
Keyword(s):  
Short Channel ◽  
Channel Characteristics

Evolution of SOI MOSFETs: from Single Gate to Multiple Gates

2003 ◽  
Vol 765 ◽  
Author(s):  
Jean-Pierre Colinge
Keyword(s):  
Current Drive ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Channel Characteristics ◽  
Device Structures ◽  
History Of ◽  
Soi Technology

AbstractTo improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs

1998 ◽  
Author(s):  
Toshiyuki Oishi ◽  
Katsuomi Shiozawa ◽  
Akihiko Furukawa ◽  
Yuji Abe ◽  
Yasunori Tokuda
Keyword(s):  
Edge Effect ◽  
Short Channel ◽  
Channel Characteristics

Short-Channel Characteristics of Self-Aligned $\Pi$-Shaped Source/Drain Ultrathin SOI MOSFETs

2008 ◽  
Vol 55 (6) ◽  
pp. 1480-1486 ◽  
Author(s):  
Jyi-Tsong Lin ◽  
Yi-Chuen Eng ◽  
Hau-Yuan Huang ◽  
Shiang-Shi Kang ◽  
Po-Hsieh Lin ◽  
...  
Keyword(s):  
Short Channel ◽  
Channel Characteristics ◽  
Ultrathin Soi

scholarly journals Gate-All-Around FETs: Nanowire and Nanosheet Structure

2020 ◽  
Author(s):  
Jun-Sik Yoon ◽  
Jinsu Jeong ◽  
Seunghwan Lee ◽  
Junjong Lee ◽  
Rock-Hyun Baek
Keyword(s):  
Low Power ◽  
High Performance ◽  
The Other ◽  
Short Channel ◽  
Technology Node ◽  
Channel Characteristics ◽  
Other Hand ◽  
Rc Delay

DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and nanosheet (NS) FETs having wide width (WNS) but the fixed thickness of the channels as 5 nm. Compared to FinFETs, GAAFETs can maintain good short channel characteristics as the WNW is smaller than 9 nm but irrespective of the WNS. DC performances of the GAAFETs improve as the Nch increases but at decreasing rate because of the parasitic resistances at the source/drain epi. On the other hand, gate capacitances of the GAAFETs increase constantly as the Nch increases. Therefore, the GAAFETs have minimum RC delay at the Nch near 3. For low power applications, NWFETs outperform FinFETs and NSFETs due to their excellent short channel characteristics by 2-D structural confinement. For standard and high performance applications, NSFETs outperform FinFETs and NWFETs by showing superior DC performances arising from larger effective widths per footprint. Overall, GAAFETs are great candidates to substitute FinFETs in the 3-nm technology node for all the applications.

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

2018 ◽  
Vol 27 (6) ◽  
pp. 2708-2712
Author(s):  
Priyanka Saha ◽  
Pritha Banerjee ◽  
Dinesh Kumar Dash ◽  
Subir Kumar Sarkar
Keyword(s):  
Double Gate ◽  
Short Channel ◽  
Channel Characteristics
Sign in / Sign up

Export Citation Format

Share Document