Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

2000 ◽  
Vol 47 (2) ◽  
pp. 354-359 ◽  
Author(s):  
E. Suzuki ◽  
K. Ishii ◽  
S. Kanemaru ◽  
T. Maeda ◽  
T. Tsutsumi ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Ultrathin Soi

Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

2013 ◽  
Vol 60 (6) ◽  
pp. 1814-1819 ◽  
Author(s):  
Qian Xie ◽  
Chia-Jung Lee ◽  
Jun Xu ◽  
Clement Wann ◽  
Jack Y.-C. Sun ◽  
...  
Keyword(s):  
Comprehensive Analysis ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Ultrathin Soi

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals The Effect of Doping on Different FET Structures: MOSFET, TFET and FinFET

2020 ◽  
Vol 9 (6) ◽  
pp. 972-979
Keyword(s):  
Drain Current ◽  
Channel Length ◽  
Short Channel Effects ◽  
Poor Control ◽  
Short Channel ◽  
Circuit Performance ◽  
The Past ◽  
Channel Effects ◽  
Circuit Density ◽  
Effect Of Doping

MOSFET have been scaled down over the past few years in order to give rise to high circuit density and increase the speed of circuit. But scaling of MOSFET leads to issues such as poor control gate over the current which depends on gate voltage. Many short channel effects (SCE) influence the circuit performance and leads to the indeterminist response of drain current. These effects can be decreased by gate excitation or by using multiple gates and by offering better control gate the device parameters. In Single gate MOSFET, gate electric field decreases but multigate MOSFET or FinFET provides better control over drain current. In this paper, different FET structures such as MOSFET, TFET and FINFET are designed at 22nm channel length and effect of doping had been evaluated and studied. To evaluate the performance donor concentration is kept constant and acceptor concentration is varied.

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