Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

2009 ◽  
Vol 56 (2) ◽  
pp. 193-200 ◽  
Author(s):  
Ugo Russo ◽  
Daniele Ielmini ◽  
Carlo Cagli ◽  
Andrea L. Lacaita
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Thermal Dissolution ◽  
Dissolution Model ◽  
Unipolar Resistive Switching ◽  
Switching Memory

Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

2011 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
Tuo-Hung Hou ◽  
Kuan-Liang Lin ◽  
Jiann Shieh ◽  
Jun-Hung Lin ◽  
Cheng-Tung Chou ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Unipolar Resistive Switching ◽  
Switching Memory

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

2014 ◽  
Vol 116 (4) ◽  
pp. 043708 ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Yen-Ting Chen ◽  
Yanzhen Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Unipolar Resistive Switching ◽  
Switching Memory
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