Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

2012 ◽  
Vol 22 (34) ◽  
pp. 17568 ◽  
Author(s):  
Doo Hyun Yoon ◽  
Si Joon Kim ◽  
Joohye Jung ◽  
Hyun Soo Lim ◽  
Hyun Jae Kim
Keyword(s):  
Nickel Oxide ◽  
Resistive Switching ◽  
Low Voltage ◽  
Ni Nanoparticles ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Unipolar Resistive Switching ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

Small ◽  
2017 ◽  
Vol 14 (2) ◽  
pp. 1702525 ◽  
Author(s):  
Xue-Feng Wang ◽  
He Tian ◽  
Hai-Ming Zhao ◽  
Tian-Yu Zhang ◽  
Wei-Quan Mao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Pd Nanoparticles ◽  
Hybrid Structure ◽  
Interface Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory
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