Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Tuo-Hung Hou; Kuan-Liang Lin; Jiann Shieh; Jun-Hung Lin; Cheng-Tung Chou; Yao-Jen Lee

doi:10.1063/1.3565239

Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Applied Physics Letters ◽

10.1063/1.3565239 ◽

2011 ◽

Vol 98 (10) ◽

pp. 103511 ◽

Cited By ~ 37

Author(s):

Tuo-Hung Hou ◽

Kuan-Liang Lin ◽

Jiann Shieh ◽

Jun-Hung Lin ◽

Cheng-Tung Chou ◽

...

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Unipolar Resistive Switching ◽

Switching Memory

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Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Journal of Materials Chemistry ◽

10.1039/c2jm33032f ◽

2012 ◽

Vol 22 (34) ◽

pp. 17568 ◽

Cited By ~ 24

Author(s):

Doo Hyun Yoon ◽

Si Joon Kim ◽

Joohye Jung ◽

Hyun Soo Lim ◽

Hyun Jae Kim

Keyword(s):

Nickel Oxide ◽

Resistive Switching ◽

Low Voltage ◽

Ni Nanoparticles ◽

Solution Processed ◽

Resistive Switching Memory ◽

Unipolar Resistive Switching ◽

Switching Memory

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Formation free low power resistive switching memory using IrOx/AlOx/W cross-point with excellent uniformity and multi level operation

10.7567/ssdm.2011.f-8-4 ◽

2011 ◽

Author(s):

W. Banerjee ◽

S. Z. Rahaman ◽

S. Maikap

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Resistive Switching Memory ◽

Multi Level ◽

Switching Memory

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A low power selector-less crossbar array with complementary resistive-switching memory

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2016.7785279 ◽

2016 ◽

Cited By ~ 1

Author(s):

Jang-Woo Ryu ◽

Kee-Won Kwon

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

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Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.094201 ◽

2015 ◽

Vol 54 (9) ◽

pp. 094201 ◽

Cited By ~ 1

Author(s):

Lifeng Liu ◽

Yi Hou ◽

Bing Chen ◽

Bin Gao ◽

Jinfeng Kang

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Resistive Switching Memory ◽

Switching Characteristics ◽

Unipolar Resistive Switching ◽

Switching Memory

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Selectorless Oxide-Based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

ECS Transactions ◽

10.1149/08903.0045ecst ◽

2019 ◽

Vol 89 (3) ◽

pp. 45-51 ◽

Cited By ~ 3

Author(s):

Ying-Chen Chen ◽

Chao-Cheng Lin ◽

Sungjun Kim ◽

Jack C. Lee

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

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Investigation on Amorphous Ga2O3 Based Conductive-Bridge Resistive Switching Memory with Low-Power, High-Speed, High Reliability

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/744 ◽

2018 ◽

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Speed ◽

High Reliability ◽

Resistive Switching Memory ◽

Conductive Bridge ◽

Switching Memory

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Ru Conducting Filament Based Cross-Point Resistive Switching Memory for Future Low Power Operation

2020 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw50361.2020.9131659 ◽

2020 ◽

Author(s):

Siddheswar Maikap ◽

Asim Senapati

Keyword(s):

Low Power ◽

Resistive Switching ◽

Cross Point ◽

Conducting Filament ◽

Resistive Switching Memory ◽

Power Operation ◽

Switching Memory

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Unipolar Resistive Switching Memory Using IrOx/Al2O3/SiO2/p-Si MIS Structure

ECS Meeting Abstracts ◽

10.1149/ma2012-01/16/732 ◽

2012 ◽

Keyword(s):

Resistive Switching ◽

Mis Structure ◽

Resistive Switching Memory ◽

Unipolar Resistive Switching ◽

Switching Memory

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Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.2010584 ◽

2009 ◽

Vol 56 (2) ◽

pp. 193-200 ◽

Cited By ~ 281

Author(s):

Ugo Russo ◽

Daniele Ielmini ◽

Carlo Cagli ◽

Andrea L. Lacaita

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Thermal Dissolution ◽

Dissolution Model ◽

Unipolar Resistive Switching ◽

Switching Memory

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Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Thin Solid Films ◽

10.1016/j.tsf.2013.09.033 ◽

2013 ◽

Vol 549 ◽

pp. 54-58 ◽

Cited By ~ 30

Author(s):

Yang-Shun Fan ◽

Po-Tsun Liu ◽

Ching-Hui Hsu

Keyword(s):

Low Power ◽

Resistive Switching ◽

High Speed ◽

High Reliability ◽

Resistive Switching Memory ◽

Amorphous Ingazno ◽

Switching Memory

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