Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

2014 ◽  
Vol 116 (4) ◽  
pp. 043709 ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Yen-Ting Chen ◽  
Yanzhen Wang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Resistive Switching ◽  
Thermal Effects ◽  
Resistive Switching Memory ◽  
Unipolar Resistive Switching ◽  
Switching Memory

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory
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