Unipolar Resistive Switching Memory Characteristics Using IrOx/Al2O3/SiO2/p-Si MIS Structure
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2012 ◽
Vol 22
(34)
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pp. 17568
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Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device
2018 ◽
Vol 44
(15)
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pp. 18108-18112
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2015 ◽
Vol 54
(9)
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pp. 094201
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