Electrical Characteristics and Thermal Stability of $ \hbox{Hf}_{x}\hbox{Ta}_{y}\hbox{Si}_{z}\hbox{N}$ Metal Gate Electrode for Advanced MOS Devices

2008 ◽  
Vol 55 (11) ◽  
pp. 3259-3266
Author(s):  
Chang-Ta Yang ◽  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
Chung-Hao Fu ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Metal Gate ◽  
Mos Devices ◽  
Thermal Stability Of

Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

2006 ◽  
Vol 27 (3) ◽  
pp. 148-150 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang ◽  
Howard Chih-Hao Wang
Keyword(s):  
Thermal Stability ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Thermal Stability Of

Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

2008 ◽  
Vol 52 (10) ◽  
pp. 1512-1517 ◽  
Author(s):  
Chung-Hao Fu ◽  
Po-Yen Chien ◽  
Kuei-Shu Chang-Liao ◽  
Tien-Ko Wang ◽  
Wen-Fa Wu
Keyword(s):  
Thermal Stability ◽  
Gate Stacks ◽  
Metal Gate ◽  
Mos Devices ◽  
Thermal Stability Of

scholarly journals Thermal stability of electrical characteristics of nickel silicide metal gate

2007 ◽  
Vol 56 (8) ◽  
pp. 4943
Author(s):  
Shan Xiao-Nan ◽  
Huang Ru ◽  
Li Yan ◽  
Cai Yi-Mao
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
Thermal Stability Of

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

2003 ◽  
Vol 24 (9) ◽  
pp. 550-552 ◽  
Author(s):  
J. Westlinder ◽  
T. Schram ◽  
L. Pantisano ◽  
E. Cartier ◽  
A. Kerber ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Atomic Layer ◽  
Gate Electrode ◽  
Mos Devices ◽  
Thermal Stability Of

Improved thermal stability of ruthenium oxide metal gate electrode on hafnium oxide gate dielectric

2007 ◽  
Vol 91 (3) ◽  
pp. 033512 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Joon-myong Lee ◽  
Hyunsang Hwang
Keyword(s):  
Thermal Stability ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Ruthenium Oxide ◽  
Gate Electrode ◽  
Metal Gate ◽  
Thermal Stability Of

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

2003 ◽  
Vol 24 (4) ◽  
pp. 230-232 ◽  
Author(s):  
H.Y. Yu ◽  
H.F. Lim ◽  
J.H. Chen ◽  
M.F. Li ◽  
Chunxiang Zhu ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Gate Electrode ◽  
Mos Devices

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors

2011 ◽  
Vol 98 (12) ◽  
pp. 123511 ◽  
Author(s):  
Chieh-Jen Ku ◽  
Ziqing Duan ◽  
Pavel I. Reyes ◽  
Yicheng Lu ◽  
Yi Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Thermal Stability Of
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