On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
2003 ◽
Vol 24
(9)
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pp. 550-552
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2008 ◽
Vol 55
(11)
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pp. 3259-3266
Keyword(s):
2007 ◽
Vol 84
(9-10)
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pp. 2226-2229
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2011 ◽
Vol 257
(16)
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pp. 7305-7309
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Keyword(s):
2006 ◽
Vol 27
(3)
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pp. 148-150
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Keyword(s):
2010 ◽
Vol 114
(4)
◽
pp. 1879-1886
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Keyword(s):