Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

2007 ◽  
Vol 54 (9) ◽  
pp. 2204-2212 ◽  
Author(s):  
S.. Reggiani ◽  
E.. Gnani ◽  
A.. Gnudi ◽  
M.. Rudan ◽  
G.. Baccarani
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Double Gate ◽  
Low Field ◽  
Field Electron

A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

2015 ◽  
Vol 62 (11) ◽  
pp. 3645-3652 ◽  
Author(s):  
Giovanni Betti Beneventi ◽  
Susanna Reggiani ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Alireza Alian ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Thin Body ◽  
Low Field ◽  
Field Electron

Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

2019 ◽  
Vol 3 (7) ◽  
pp. 45-54 ◽  
Author(s):  
Enzo Ungersboeck ◽  
Viktor Sverdlov ◽  
Hans Kosina ◽  
Siegfried Selberherr
Keyword(s):  
Electron Mobility ◽  
Low Field ◽  
Field Electron

High-Field Electron Mobility Model for Strained-Silicon Devices

2006 ◽  
Vol 53 (12) ◽  
pp. 3054-3062 ◽  
Author(s):  
Siddhartha Dhar ◽  
Hans Kosina ◽  
Gerhard Karlowatz ◽  
Stephan Enzo Ungersboeck ◽  
Tibor Grasser ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Field ◽  
Mobility Model ◽  
Strained Silicon ◽  
Silicon Devices ◽  
Field Electron
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