Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors

1986 ◽  
Vol 48 (6) ◽  
pp. 431-433 ◽  
Author(s):  
P. A. Folkes
Keyword(s):  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Compensation Ratio ◽  
Low Field ◽  
Field Electron

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

scholarly journals Monte Carlo Study of Electronic Transport in Monolayer InSe

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4210 ◽  
Author(s):  
Sanjay Gopalan ◽  
Gautam Gaddemane ◽  
Maarten L. Van de Put ◽  
Massimo V. Fischetti
Keyword(s):  
Monte Carlo ◽  
Long Range ◽  
Electron Mobility ◽  
Short Range ◽  
Field Effect Transistors ◽  
2D Materials ◽  
Matrix Elements ◽  
Electronic Band ◽  
Low Field ◽  
Wide Range

The absence of a band gap in graphene makes it of minor interest for field-effect transistors. Layered metal chalcogenides have shown great potential in device applications thanks to their wide bandgap and high carrier mobility. Interestingly, in the ever-growing library of two-dimensional (2D) materials, monolayer InSe appears as one of the new promising candidates, although still in the initial stage of theoretical studies. Here, we present a theoretical study of this material using density functional theory (DFT) to determine the electronic band structure as well as the phonon spectrum and electron-phonon matrix elements. The electron-phonon scattering rates are obtained using Fermi’s Golden Rule and are used in a full-band Monte Carlo computer program to solve the Boltzmann transport equation (BTE) to evaluate the intrinsic low-field mobility and velocity-field characteristic. The electron-phonon matrix elements, accounting for both long- and short-range interactions, are considered to study the contributions of different scattering mechanisms. Since monolayer InSe is a polar piezoelectric material, scattering with optical phonons is dominated by the long-range interaction with longitudinal optical (LO) phonons while scattering with acoustic phonons is dominated by piezoelectric scattering with the longitudinal (LA) branch at room temperature (T = 300 K) due to a lack of a center of inversion symmetry in monolayer InSe. The low-field electron mobility, calculated considering all electron-phonon interactions, is found to be 110 cm2V−1s−1, whereas values of 188 cm2V−1s−1 and 365 cm2V−1s−1 are obtained considering the long-range and short-range interactions separately. Therefore, the calculated electron mobility of monolayer InSe seems to be competitive with other previously studied 2D materials and the piezoelectric properties of monolayer InSe make it a suitable material for a wide range of applications in next generation nanoelectronics.

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