The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

2017 ◽  
Vol 122 (11) ◽  
pp. 114303 ◽  
Author(s):  
Gokula Kannan ◽  
Dragica Vasileska
Keyword(s):  
Surface Roughness ◽  
Electron Mobility ◽  
Nano Scale ◽  
Low Field ◽  
Surface Roughness Scattering ◽  
Field Electron ◽  
The Impact

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

2019 ◽  
Vol 954 ◽  
pp. 51-59
Author(s):  
Xi Duo Hu ◽  
Cheng Ming Li ◽  
Shao Yan Yang
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Electron Mobility ◽  
Atomic Scale ◽  
Free Standing ◽  
Poisson Equations ◽  
Surface Roughness Scattering ◽  
Calculation Results ◽  
Roughness Amplitude ◽  
Dimensional Electron Gas

Abstract:Electron mobility limited by surface roughness scattering in free-standing GaAs thin ribbon with an internal parabolic quantum well caused by surface state is investigated in detail. Based on analyzing the parabolic quantum well including the energy subband level, wave function and the confined potential profile in the thin ribbon by solving Schrödinger and Poisson equations self-consistently, the electron mobility could be investigated. Conclusion indicates that remote surface roughness (RSR) of the thin ribbon will change the two dimensional electron gas (2DEG) mobility through the medium of barrier height fluctuation of the parabolic well in atomic scale. Calculation results reveal that the 2DEG mobility decreases with increasing roughness amplitude, which is characterized in terms of the surface roughness height and the roughness lateral size.

Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

2019 ◽  
Vol 3 (7) ◽  
pp. 45-54 ◽  
Author(s):  
Enzo Ungersboeck ◽  
Viktor Sverdlov ◽  
Hans Kosina ◽  
Siegfried Selberherr
Keyword(s):  
Electron Mobility ◽  
Low Field ◽  
Field Electron

Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

2007 ◽  
Vol 54 (9) ◽  
pp. 2204-2212 ◽  
Author(s):  
S.. Reggiani ◽  
E.. Gnani ◽  
A.. Gnudi ◽  
M.. Rudan ◽  
G.. Baccarani
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Double Gate ◽  
Low Field ◽  
Field Electron

scholarly journals Low-field electron mobility in wurtzite InN

2006 ◽  
Vol 88 (3) ◽  
pp. 032101 ◽  
Author(s):  
V. M. Polyakov ◽  
F. Schwierz
Keyword(s):  
Electron Mobility ◽  
Low Field ◽  
Field Electron
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