Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

2003 ◽  
Vol 50 (12) ◽  
pp. 2445-2455 ◽  
Author(s):  
D. Esseni ◽  
A. Abramo ◽  
L. Selmi ◽  
E. Sangiorgi
2007 ◽  
Vol 54 (9) ◽  
pp. 2204-2212 ◽  
Author(s):  
S.. Reggiani ◽  
E.. Gnani ◽  
A.. Gnudi ◽  
M.. Rudan ◽  
G.. Baccarani

2019 ◽  
Vol 3 (7) ◽  
pp. 45-54 ◽  
Author(s):  
Enzo Ungersboeck ◽  
Viktor Sverdlov ◽  
Hans Kosina ◽  
Siegfried Selberherr

2006 ◽  
Vol 88 (3) ◽  
pp. 032101 ◽  
Author(s):  
V. M. Polyakov ◽  
F. Schwierz

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