Device Design for Subthreshold Slope and Threshold Voltage Control in Sub-100-nm Fully Depleted SOI MOSFETs

2004 ◽  
Vol 51 (12) ◽  
pp. 2161-2167 ◽  
Author(s):  
T. Numata ◽  
S.-I. Takagi
Keyword(s):  
Threshold Voltage ◽  
Voltage Control ◽  
Subthreshold Slope ◽  
Device Design ◽  
Fully Depleted

scholarly journals Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs

2018 ◽  
Vol 13 (3) ◽  
pp. 1-8
Author(s):  
Camila Alves ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Threshold Voltage ◽  
Voltage Gain ◽  
Two Dimensional ◽  
Subthreshold Slope ◽  
Electrical Measurements ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Basic Parameters ◽  
Output Conductance ◽  
Analog Parameters

This paper presents an evaluation of mismatching impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.

Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

2016 ◽  
Vol 3 (24) ◽  
pp. 1600713 ◽  
Author(s):  
Ji Hoon Park ◽  
Fwzah H. Alshammari ◽  
Zhenwei Wang ◽  
Husam N. Alshareef
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Interface Engineering
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