A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

2012 IEEE International Conference on Electro/Information Technology ◽

10.1109/eit.2012.6220737 ◽

2012 ◽

Author(s):

Nadim Chowdhury ◽

Zubair Al Azim ◽

Imtiaz Ahmed ◽

Iftikhar Ahmad Niaz ◽

Md. Hasibul Alam ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Voltage Control ◽

Double Gate ◽

Fully Depleted ◽

Physically Based

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

10.7567/ssdm.2011.p-3-9 ◽

2011 ◽

Author(s):

Z. M. Lin ◽

H. C. Lin ◽

K. M. Liu ◽

T. Y. Huang

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Fully Depleted ◽

Subthreshold Current

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Threshold voltage modeling of deep-submicron double-gate fully-depleted SOI MOSFET

2007 7th International Conference on ASIC ◽

10.1109/icasic.2007.4415838 ◽

2007 ◽

Cited By ~ 1

Author(s):

Zhang Zhengfan ◽

Fang Jian ◽

Li Ruzhang ◽

Zhang Zhengyuan ◽

Li Zhaoji

Keyword(s):

Threshold Voltage ◽

Deep Submicron ◽

Double Gate ◽

Fully Depleted ◽

Soi Mosfet

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Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs

2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems ◽

10.23919/mixdes.2017.8005168 ◽

2017 ◽

Cited By ~ 1

Author(s):

Michael Graef ◽

Franziska Hain ◽

Fabian Hosenfeld ◽

Fabian Horst ◽

Atieh Farokhnejad ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Short Channel

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Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance

Engineering Science and Technology an International Journal ◽

10.1016/j.jestch.2016.08.014 ◽

2016 ◽

Vol 19 (4) ◽

pp. 1857-1863 ◽

Cited By ~ 3

Author(s):

Subha Subramaniam ◽

Sangeeta M. Joshi ◽

R.N. Awale

Keyword(s):

Numerical Simulation ◽

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Nanowire Transistor ◽

Improved Performance ◽

Voltage Tuning

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Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Microwave and Optical Technology Letters ◽

10.1002/mop.22319 ◽

2007 ◽

Vol 49 (4) ◽

pp. 979-986

Author(s):

Alok Kushwaha ◽

Manoj K Pandey ◽

A. K Gupta

Keyword(s):

Analytical Modeling ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Dual Material

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Analytical modeling of threshold voltage of a double gate junction less field effect transistor

2013 2nd International Conference on Advances in Electrical Engineering (ICAEE) ◽

10.1109/icaee.2013.6750315 ◽

2013 ◽

Cited By ~ 2

Author(s):

Ayed Al Sayem ◽

Yeasir Arafat ◽

Md. Mushfiqur Rahman

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor

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Threshold Voltage Control of Organic Thin Film Transistors (OTFTs)by Using Floated Double Gate Structure

10.7567/ssdm.2016.f-1-04 ◽

2016 ◽

Author(s):

S. Lee ◽

T. Yokota ◽

T. Someya

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Control ◽

Organic Thin Film Transistors ◽

Double Gate ◽

Organic Thin Film ◽

Gate Structure

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Device Design for Subthreshold Slope and Threshold Voltage Control in Sub-100-nm Fully Depleted SOI MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.839760 ◽

2004 ◽

Vol 51 (12) ◽

pp. 2161-2167 ◽

Cited By ~ 46

Author(s):

T. Numata ◽

S.-I. Takagi

Keyword(s):

Threshold Voltage ◽

Voltage Control ◽

Subthreshold Slope ◽

Device Design ◽

Fully Depleted

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Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

IEEE Transactions on Electron Devices ◽

10.1109/16.535323 ◽

1996 ◽

Vol 43 (9) ◽

pp. 1387-1393 ◽

Cited By ~ 34

Author(s):

Shiao-Shien Chen ◽

J.B. Kuo

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Fully Depleted ◽

Channel Effect ◽

Deep Submicrometer ◽

Threshold Voltage Model

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