Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

2016 ◽  
Vol 3 (24) ◽  
pp. 1600713 ◽  
Author(s):  
Ji Hoon Park ◽  
Fwzah H. Alshammari ◽  
Zhenwei Wang ◽  
Husam N. Alshareef
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Interface Engineering

Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

2009 ◽  
Vol 94 (8) ◽  
pp. 083310 ◽  
Author(s):  
Masatoshi Kitamura ◽  
Yasutaka Kuzumoto ◽  
Shigeru Aomori ◽  
Masakazu Kamura ◽  
Jong Ho Na ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bottom Contact

Threshold voltage control by gate electrode in Ga-Sn-Zn-O thin-film transistors for logic inverter application

2011 ◽  
Vol 5 (5-6) ◽  
pp. 211-213 ◽  
Author(s):  
Hee Sung Lee ◽  
Chan Ho Park ◽  
Kwang H. Lee ◽  
Dong-Ho Kim ◽  
Hye-Ri Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Gate Electrode

Three-Terminal Floating-Gate Cell for Threshold-Voltage Control of Organic Thin-Film Transistors

2021 ◽  
Vol 68 (3) ◽  
pp. 1088-1092
Author(s):  
Kareem Mansour ◽  
Samar Elsaegh ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
Ghada H. Ibrahim
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Organic Thin Film Transistors ◽  
Floating Gate ◽  
Organic Thin Film

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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