Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices

2004 ◽  
Vol 51 (5) ◽  
pp. 708-713 ◽  
Author(s):  
Shiao-Shien Chen ◽  
Shiang Huang-Lu ◽  
Tien-Hao Tang
Keyword(s):  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Layout Technique ◽  
Soi Devices

Photo-detecting of graphene/insulator/silicon heterojunction with direct tunneling mechanism

2019 ◽  
Vol 126 (22) ◽  
pp. 223102
Author(s):  
Wenxin Yang ◽  
Ji Xu ◽  
Yusheng Zhai ◽  
Yutong Shi ◽  
Xiaobing Zhang ◽  
...  
Keyword(s):  
Direct Tunneling ◽  
Tunneling Mechanism

A MOSFET gate current model with the direct tunneling mechanism

2000 ◽  
Vol 44 (10) ◽  
pp. 1819-1824 ◽  
Author(s):  
Chorng-Jye Sheu ◽  
Sheng-Lyang Jang
Keyword(s):  
Current Model ◽  
Gate Current ◽  
Direct Tunneling ◽  
Tunneling Mechanism

Tunneling Current Through MIS Structures With Ultra-Thin Insulators

1996 ◽  
Vol 428 ◽  
Author(s):  
H. Fujioka ◽  
H.-J. Wann ◽  
D.-G. Park ◽  
Y.-C. King ◽  
Y.-F. Chyan ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Minute Amount ◽  
Semiconductor Structures ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Mis Structures

AbstractLeakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

scholarly journals Tunneling mechanism due to chaos in a complex phase space

2001 ◽  
Vol 64 (2) ◽  
Author(s):  
T. Onishi ◽  
A. Shudo ◽  
K. S. Ikeda ◽  
K. Takahashi
Keyword(s):  
Phase Space ◽  
Complex Phase ◽  
Tunneling Mechanism

Negative evidence for a proton-tunneling mechanism in the phase transition ofKH2PO4-type crystals

1987 ◽  
Vol 36 (1) ◽  
pp. 874-876 ◽  
Author(s):  
Mizuhiko Ichikawa ◽  
Kiyosi Motida ◽  
Noboru Yamada
Keyword(s):  
Phase Transition ◽  
Negative Evidence ◽  
Proton Tunneling ◽  
Tunneling Mechanism

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices
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