Photo-detecting of graphene/insulator/silicon heterojunction with direct tunneling mechanism

2019 ◽  
Vol 126 (22) ◽  
pp. 223102
Author(s):  
Wenxin Yang ◽  
Ji Xu ◽  
Yusheng Zhai ◽  
Yutong Shi ◽  
Xiaobing Zhang ◽  
...  
Keyword(s):  
Direct Tunneling ◽  
Tunneling Mechanism

A MOSFET gate current model with the direct tunneling mechanism

2000 ◽  
Vol 44 (10) ◽  
pp. 1819-1824 ◽  
Author(s):  
Chorng-Jye Sheu ◽  
Sheng-Lyang Jang
Keyword(s):  
Current Model ◽  
Gate Current ◽  
Direct Tunneling ◽  
Tunneling Mechanism

Tunneling Current Through MIS Structures With Ultra-Thin Insulators

1996 ◽  
Vol 428 ◽  
Author(s):  
H. Fujioka ◽  
H.-J. Wann ◽  
D.-G. Park ◽  
Y.-C. King ◽  
Y.-F. Chyan ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Tunneling Current ◽  
Silicon Oxynitride ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Minute Amount ◽  
Semiconductor Structures ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Mis Structures

AbstractLeakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

scholarly journals Tunneling mechanism due to chaos in a complex phase space

2001 ◽  
Vol 64 (2) ◽  
Author(s):  
T. Onishi ◽  
A. Shudo ◽  
K. S. Ikeda ◽  
K. Takahashi
Keyword(s):  
Phase Space ◽  
Complex Phase ◽  
Tunneling Mechanism

Negative evidence for a proton-tunneling mechanism in the phase transition ofKH2PO4-type crystals

1987 ◽  
Vol 36 (1) ◽  
pp. 874-876 ◽  
Author(s):  
Mizuhiko Ichikawa ◽  
Kiyosi Motida ◽  
Noboru Yamada
Keyword(s):  
Phase Transition ◽  
Negative Evidence ◽  
Proton Tunneling ◽  
Tunneling Mechanism

scholarly journals In-situ observation of trapped carriers in organic metal halide perovskite films with ultra-fast temporal and ultra-high energetic resolutions

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kanishka Kobbekaduwa ◽  
Shreetu Shrestha ◽  
Pan Adhikari ◽  
Exian Liu ◽  
Lawrence Coleman ◽  
...  
Keyword(s):  
Cross Sections ◽  
High Energy ◽  
High Energy Resolution ◽  
In Situ Observation ◽  
Trap States ◽  
Tunneling Mechanism ◽  
Photocurrent Spectroscopy ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

AbstractWe in-situ observe the ultrafast dynamics of trapped carriers in organic methyl ammonium lead halide perovskite thin films by ultrafast photocurrent spectroscopy with a sub-25 picosecond time resolution. Upon ultrafast laser excitation, trapped carriers follow a phonon assisted tunneling mechanism and a hopping transport mechanism along ultra-shallow to shallow trap states ranging from 1.72–11.51 millielectronvolts and is demonstrated by time-dependent and independent activation energies. Using temperature as an energetic ruler, we map trap states with ultra-high energy resolution down to < 0.01 millielectronvolt. In addition to carrier mobility of ~4 cm2V−1s−1 and lifetime of ~1 nanosecond, we validate the above transport mechanisms by highlighting trap state dynamics, including trapping rates, de-trapping rates and trap properties, such as trap density, trap levels, and capture-cross sections. In this work we establish a foundation for trap dynamics in high defect-tolerant perovskites with ultra-fast temporal and ultra-high energetic resolution.

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