Using Direct-Tunneling Mechanism to Suppress Hysteresis Effect in Floating-Body Partially Depleted SOI Devices

2004 ◽  
Vol 25 (5) ◽  
pp. 331-333 ◽  
Author(s):  
S.-S. Chen ◽  
S. Huang-Lu ◽  
T.-H. Tang
Keyword(s):  
Hysteresis Effect ◽  
Floating Body ◽  
Direct Tunneling ◽  
Tunneling Mechanism ◽  
Soi Devices

On the Temperature Dependence of Hysteresis Effect in Floating-Body Partially-Depleted SOI CMOS Circuits

2000 ◽  
Author(s):  
R. Puri ◽  
C. T. Chuang ◽  
M. B. Ketchen ◽  
M. M. Pelella ◽  
M. G. Rosenfield
Keyword(s):  
Temperature Dependence ◽  
Hysteresis Effect ◽  
Floating Body ◽  
Cmos Circuits ◽  
Soi Cmos

New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

2009 ◽  
Vol 53 (7) ◽  
pp. 741-745
Author(s):  
Georges Guegan ◽  
R. Gwoziecki ◽  
P. Touret ◽  
C. Raynaud ◽  
J. Pretet ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Floating Body ◽  
Body Effect ◽  
Direct Tunneling ◽  
Floating Body Effect ◽  
Direct Tunneling Current

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

1996 ◽  
Vol 43 (2) ◽  
pp. 318-325 ◽  
Author(s):  
H.C. Shin ◽  
Ik-Sung Lim ◽  
M. Racanelli ◽  
Wen-Ling Margaret Huang ◽  
J. Foerstner ◽  
...  
Keyword(s):  
Thin Film ◽  
Floating Body ◽  
Soi Devices

On the temperature dependence of hysteresis effect in floating-body partially depleted SOI CMOS circuits

2001 ◽  
Vol 36 (2) ◽  
pp. 290-298 ◽  
Author(s):  
R. Puri ◽  
C.T. Chuang ◽  
M.B. Ketchen ◽  
M.M. Pelella ◽  
M.G. Rosenfield
Keyword(s):  
Temperature Dependence ◽  
Hysteresis Effect ◽  
Floating Body ◽  
Cmos Circuits ◽  
Soi Cmos
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