The study of threshold voltage extraction of nitride spacer NMOS transistors in early stage hot carrier stress

2002 ◽  
Vol 49 (8) ◽  
pp. 1488-1490 ◽  
Author(s):  
Jun-Lin Tsai ◽  
Kai-Ye Huang ◽  
Jinn-Horng Lai ◽  
Jeng Gong ◽  
Fu-Jei Yang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Early Stage ◽  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Nmos Transistors

Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs

2019 ◽  
Vol 53 (8) ◽  
pp. 085104 ◽  
Author(s):  
Jingjing Shao ◽  
Wan-Ching Su ◽  
Ting-Chang Chang ◽  
Hong-Chih Chen ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Hot Carrier ◽  
Hot Carrier Stress

HOT CARRIER EFFECTS ON JITTER PERFORMANCE IN CMOS VOLTAGE-CONTROLLED OSCILLATORS

2006 ◽  
Vol 06 (03) ◽  
pp. L329-L334 ◽  
Author(s):  
CHI ZHANG ◽  
ASHOK SRIVASTAVA
Keyword(s):  
Threshold Voltage ◽  
Cmos Technology ◽  
Interface Traps ◽  
Voltage Controlled Oscillators ◽  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Hot Carrier Effects ◽  
Voltage Degradation ◽  
Operation Frequency ◽  
Threshold Voltage Degradation

The effects of hot carrier stress on CMOS voltage-controlled oscillators (VCO) are investigated. A model of the threshold voltage degradation in MOSFETs due to hot carrier stress has been used to model jitter in voltage-controlled oscillators. The relation between the stress time which induces the hot carrier effects due to generation of interface traps near the drain of the n-MOSFETs, and the degradation of the VCO performance is presented. The VCO performance degradation takes into consideration decrease in operation frequency and increase in jitter. The experimental circuits have been designed in 0.5 μm n-well CMOS technology for operation at 3 V. Experimental results show that after four hours hot-carrier stress the jitter is increased by 40 ps for single-ended current starved VCOs.

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes
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