Comparison of hot carrier stress and constant voltage stress in hf-sificate NMOS transistors with poly and TiN gate stack

2005 ◽  
Author(s):  
J.H. Sim ◽  
B.H. Lee ◽  
S.C. Song ◽  
C.D. Young ◽  
R. Choi ◽  
...  
Keyword(s):  
Constant Voltage ◽  
Gate Stack ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Hot Carrier Stress ◽  
Nmos Transistors

scholarly journals Investigation of Hot Carrier Stress and Constant Voltage Stress in High- $\kappa$ Si-Based TFETs

2015 ◽  
Vol 15 (2) ◽  
pp. 236-241 ◽  
Author(s):  
Lili Ding ◽  
Elena Gnani ◽  
Simone Gerardin ◽  
Marta Bagatin ◽  
Francesco Driussi ◽  
...  
Keyword(s):  
Constant Voltage ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Hot Carrier Stress

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Low Frequency Noise Degradation in 45 nm High-k nMOSFETs due to Hot Carrier and Constant Voltage Stress

2009 ◽  
Author(s):  
M. Shahriar Rahman ◽  
Zeynep Çelik-Butler ◽  
M. A. Quevedo-Lopez ◽  
Ajit Shanware ◽  
Luigi Colombo ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Constant Voltage ◽  
Low Frequency Noise ◽  
Hot Carrier ◽  
High K ◽  
Voltage Stress

Effect of substrate hot carrier stress on high-k gate stack

2008 ◽  
Author(s):  
Hokyung Park ◽  
Gennadi Bersuker ◽  
Chang Yong Kang ◽  
Chadwin Young ◽  
Hsing-Huang Tseng ◽  
...  
Keyword(s):  
Gate Stack ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Stress

Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs

2009 ◽  
Vol 9 (2) ◽  
pp. 203-208 ◽  
Author(s):  
M.S. Rahman ◽  
T.H. Morshed ◽  
Z. Celik-Butler ◽  
M.A. Quevedo-Lopez ◽  
A. Shanware ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Constant Voltage ◽  
Low Frequency Noise ◽  
Hot Carrier ◽  
High K ◽  
Voltage Stress ◽  
High K Dielectric

Effect of substrate hot carrier stress on high-k gate stack

2008 ◽  
Author(s):  
H. Park ◽  
G. Bersuker ◽  
C. Y. Kang ◽  
C. Young ◽  
H-H Tseng ◽  
...  
Keyword(s):  
Gate Stack ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Stress
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