Effect of Work Function and Ionization Potential on the Reignition Voltage of Arcs Between Ag/Metal Oxide Contacts

1981 ◽  
Vol 4 (1) ◽  
pp. 70-75 ◽  
Author(s):  
M. Lindmayer
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Ionization Potential

scholarly journals Role of the Metal-Oxide Work Function on Photocurrent Generation in Hybrid Solar Cells

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Chawloon Thu ◽  
Philipp Ehrenreich ◽  
Ka Kan Wong ◽  
Eugen Zimmermann ◽  
James Dorman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Work Function ◽  
Hybrid Solar Cells ◽  
Photocurrent Generation

Manipulation of interface electronic structure by thin metal oxide films

2013 ◽  
Vol 1537 ◽  
Author(s):  
Chenggong Wang ◽  
Irfan ◽  
Yongli Gao
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Work Function ◽  
Oxide Layer ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Hole Transport ◽  
Thin Metal ◽  
Transport Layer ◽  
Metal Oxide Films

AbstractWe have investigated the counter intuitive phenomenon of inserting a metal oxide layer to improve hole injection or extraction in organic semiconductor devices using ultraviolet photoemission, x-ray photoemission, and inverse photoemission spectroscopy (UPS, XPS and IPES). We observed that metal oxides, such as MoO3, substantially increase the work function when deposited on indium-tin-oxide (ITO). The increase lifts up the highest occupied molecular orbital (HOMO) of the hole transport layer, therefore reduces the energy barrier between the HOMO and the Fermi level of the anode. The uplift creates an interface band bending region that results in a drift electric field that encourages the collection of holes at the anode. The optimum thickness for the oxide layer is estimated to be 2 nm. We have also investigated the effects of ambient or O2 exposure of MoO3. We observed that while most of the electronic energy levels of the oxide remained largely intact, the work function reduction was significant. This opens a way for optimal energy level alignment by modifying the work function through exposure. Furthermore, we observed that the work function reduction by exposure could be reversed by proper annealing of the sample in vacuum. The investigations therefore point to manipulate the interface electronic structure and charge injection/extraction by thin metal oxide films.

scholarly journals Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

2020 ◽  
Vol 22 (44) ◽  
pp. 25593-25605
Author(s):  
Ivan Marri ◽  
Michele Amato ◽  
Matteo Bertocchi ◽  
Andrea Ferretti ◽  
Daniele Varsano ◽  
...  
Keyword(s):  
Perturbation Theory ◽  
Surface Chemistry ◽  
Work Function ◽  
Ionization Potential ◽  
Many Body ◽  
Many Body Perturbation Theory ◽  
The Many ◽  
Electronic Affinity

Surface chemistry effects are calculated within the many body perturbation theory for Si(100), Ge(100) and SiGe surfaces.

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

2007 ◽  
Vol 90 (10) ◽  
pp. 103510 ◽  
Author(s):  
Musarrat Hasan ◽  
Hokyung Park ◽  
Hyundoek Yang ◽  
Hyunsang Hwang ◽  
Hyung-Suk Jung ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Interface Layer ◽  
Metal Oxide Semiconductor ◽  
Tantalum Nitride ◽  
Oxide Semiconductor ◽  
Metal Gate
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