MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034559 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Ghetti

Keyword(s):

Monte Carlo ◽

Silicon Oxide ◽

Device Simulation ◽

Gate Current ◽

Hot Carrier ◽

Self Consistent ◽

Monte Carlo Device Simulation

Download Full-text

Hot-electron induced MOSFET gate current simulation by coupled silicon/oxide Monte Carlo device simulation

Solid-State Electronics ◽

10.1016/s0038-1101(03)00103-5 ◽

2003 ◽

Vol 47 (9) ◽

pp. 1507-1514 ◽

Cited By ~ 2

Author(s):

Andrea Ghetti

Keyword(s):

Monte Carlo ◽

Silicon Oxide ◽

Device Simulation ◽

Hot Electron ◽

Gate Current ◽

Monte Carlo Device Simulation

Download Full-text

Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282837 ◽

2006 ◽

Cited By ~ 2

Author(s):

Masami Hane ◽

Takeo Ikezawa ◽

Michihito Kawada ◽

Tatsuya Ezaki ◽

Toyoji Yamamoto

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Orientation Effects ◽

Full Band ◽

Self Consistent ◽

Channel Orientation ◽

Monte Carlo Device Simulation

Download Full-text

Accurate prediction of hot-carrier effects for a deep sub-μm CMOS technology based on inverse modeling and full band Monte Carlo device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865273 ◽

2005 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

S. Yamaguchi ◽

H. Goto

Keyword(s):

Monte Carlo ◽

Inverse Modeling ◽

Device Simulation ◽

Cmos Technology ◽

Accurate Prediction ◽

Hot Carrier ◽

Full Band ◽

Hot Carrier Effects ◽

Monte Carlo Device Simulation

Download Full-text

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent Harmonic Balance / Cellular Monte Carlo device simulation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131668 ◽

2011 ◽

Cited By ~ 6

Author(s):

D. Guerra ◽

F. A. Marino ◽

D. K. Ferry ◽

S. M. Goodnick ◽

M. Saraniti ◽

...

Keyword(s):

Monte Carlo ◽

Power Amplifier ◽

Harmonic Balance ◽

Device Simulation ◽

Large Signal ◽

Gan Hemt ◽

Self Consistent ◽

Cellular Monte Carlo ◽

Monte Carlo Device Simulation

Download Full-text

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

2015 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2015.7301990 ◽

2015 ◽

Cited By ~ 1

Author(s):

Longxiang Yin ◽

Minquaan Fang ◽

Lang Zeng ◽

Lilun Zhang ◽

Gang Du ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Ensemble Monte Carlo ◽

Full Band ◽

Self Consistent ◽

Intel Mic ◽

Monte Carlo Device Simulation

Download Full-text

A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865274 ◽

2005 ◽

Cited By ~ 1

Author(s):

Gyoyoung Jin ◽

E.C. Kan ◽

R.W. Dutton

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Practical Method ◽

Generation Process ◽

Self Consistent ◽

Monte Carlo Device Simulation

Download Full-text

Time-step stability for self-consistent Monte Carlo device simulation

10.2172/10151856 ◽

1994 ◽

Cited By ~ 1

Author(s):

P.W. Rambo ◽

J. Denavit

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Time Step ◽

Self Consistent ◽

Monte Carlo Device Simulation

Download Full-text

A quantum correction based on schrodinger equation applied to Monte Carlo device simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.809431 ◽

2003 ◽

Vol 50 (2) ◽

pp. 440-446 ◽

Cited By ~ 89

Author(s):

B. Winstead ◽

U. Ravaioli

Keyword(s):

Monte Carlo ◽

Schrödinger Equation ◽

Schrodinger Equation ◽

Quantum Correction ◽

Device Simulation ◽

Monte Carlo Device Simulation

Download Full-text

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

Download Full-text

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

Journal of Computational Electronics ◽

10.1023/b:jcel.0000011406.20864.06 ◽

2003 ◽

Vol 2 (2-4) ◽

pp. 97-103 ◽

Cited By ~ 11

Author(s):

Tatsuya Ezaki ◽

Philipp Werner ◽

Masami Hane

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Quantum Mechanical ◽

Self Consistent

Download Full-text