International Conferencre on Simulation of Semiconductor Processes and Devices
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Published By Japan Soc. Appl. Phys

4891140275

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Technology modeling for emerging SOI devices

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034558 ◽

2003 ◽

Cited By ~ 6

Author(s):

M. Ieong ◽

P. Oldiges

Keyword(s):

Technology Modeling ◽

Soi Devices

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Realistic scaling scenario for sub-100nm embedded SRAM based on 3-dimensional interconnect simulation

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034517 ◽

2003 ◽

Cited By ~ 2

Author(s):

Y. Tsukamoto ◽

T. Kunikiyo ◽

K. Nii ◽

H. Makino ◽

S. Iwade ◽

...

Keyword(s):

3 Dimensional ◽

Embedded Sram

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A novel CDM-like discharge effect during human body model (HBM) ESD stress

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034530 ◽

2003 ◽

Cited By ~ 3

Author(s):

V. Axelrad ◽

Y. Huh ◽

J.W. Chen ◽

P. Bendix

Keyword(s):

Human Body ◽

Human Body Model ◽

Body Model

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Simulation of substrate currents

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034521 ◽

2003 ◽

Cited By ~ 3

Author(s):

W. Schoenmaker ◽

P. Meuris ◽

W. Magnus ◽

B. Maleszka

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Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034550 ◽

2003 ◽

Cited By ~ 3

Author(s):

M. Gritsch ◽

H. Kosina ◽

T. Grasser ◽

S. Selberherr

Keyword(s):

Transport Model ◽

Soi Mosfet ◽

Hydrodynamic Transport

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Extraction of 3D interconnect impedances using edge elements without gauge condition

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034537 ◽

2003 ◽

Cited By ~ 3

Author(s):

F. Charlet ◽

J.F. Carpentier

Keyword(s):

Gauge Condition ◽

Edge Elements

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Hot-carrier energy distribution model and its application to the MOSFET substrate current

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034544 ◽

2003 ◽

Author(s):

Chang-sub Lee ◽

Gyoyoung Jin ◽

Keun-ho Lee ◽

Jeong-taek Kong ◽

Won-seong Lee ◽

...

Keyword(s):

Energy Distribution ◽

Distribution Model ◽

Hot Carrier ◽

Substrate Current ◽

Carrier Energy

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MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034559 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Ghetti

Keyword(s):

Monte Carlo ◽

Silicon Oxide ◽

Device Simulation ◽

Gate Current ◽

Hot Carrier ◽

Self Consistent ◽

Monte Carlo Device Simulation

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Transistor width dependence of LER degradation to CMOS device characteristics

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034525 ◽

2003 ◽

Cited By ~ 9

Author(s):

J. Wu ◽

Jihong Chen ◽

Kaiping Liu

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Integrated atomistic process and device simulation of decananometre MOSFETs

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034523 ◽

2003 ◽

Cited By ~ 14

Author(s):

A. Asenov ◽

M. Jaraiz ◽

S. Roy ◽

G. Roy ◽

F. Adamu-Lema ◽

...

Keyword(s):

Device Simulation

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International Conferencre on Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Japan Soc. Appl. Phys

Technology modeling for emerging SOI devices

Realistic scaling scenario for sub-100nm embedded SRAM based on 3-dimensional interconnect simulation

A novel CDM-like discharge effect during human body model (HBM) ESD stress

Simulation of substrate currents

Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

Extraction of 3D interconnect impedances using edge elements without gauge condition

Hot-carrier energy distribution model and its application to the MOSFET substrate current

MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

Transistor width dependence of LER degradation to CMOS device characteristics

Integrated atomistic process and device simulation of decananometre MOSFETs

International Conferencre on Simulation of Semiconductor Processes and Devices
Latest Publications