Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871202 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo ◽

Spatial Analysis ◽

Transit Time ◽

Silicon Germanium ◽

Device Simulation ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Drift Diffusion ◽

Full Band ◽

Monte Carlo Device Simulation

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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

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Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation

2015 International Conference on Electrical Engineering and Information Communication Technology (ICEEICT) ◽

10.1109/iceeict.2015.7307345 ◽

2015 ◽

Author(s):

Upoma Saha ◽

Fahmi Imteaz ◽

Oishi Prova Saleque ◽

Md. Mehedi Hassan Shohag ◽

Bishwajit Debnath

Keyword(s):

Numerical Simulation ◽

Transit Time ◽

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Silvaco Atlas

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Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282837 ◽

2006 ◽

Cited By ~ 2

Author(s):

Masami Hane ◽

Takeo Ikezawa ◽

Michihito Kawada ◽

Tatsuya Ezaki ◽

Toyoji Yamamoto

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Orientation Effects ◽

Full Band ◽

Self Consistent ◽

Channel Orientation ◽

Monte Carlo Device Simulation

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Accurate prediction of hot-carrier effects for a deep sub-μm CMOS technology based on inverse modeling and full band Monte Carlo device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865273 ◽

2005 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

S. Yamaguchi ◽

H. Goto

Keyword(s):

Monte Carlo ◽

Inverse Modeling ◽

Device Simulation ◽

Cmos Technology ◽

Accurate Prediction ◽

Hot Carrier ◽

Full Band ◽

Hot Carrier Effects ◽

Monte Carlo Device Simulation

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Assessment of accuracy limitations of full band Monte Carlo device simulation

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621408 ◽

2002 ◽

Cited By ~ 14

Author(s):

F. Venturi ◽

A. Ghetti

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Full Band ◽

Monte Carlo Device Simulation

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Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799300 ◽

2003 ◽

Cited By ~ 1

Author(s):

S. Keith ◽

C. Jungemann ◽

S. Decker ◽

B. Neinhus ◽

M. Bartels ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Sige Hbt ◽

Full Band ◽

Monte Carlo Device Simulation

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Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

2015 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2015.7301990 ◽

2015 ◽

Cited By ~ 1

Author(s):

Longxiang Yin ◽

Minquaan Fang ◽

Lang Zeng ◽

Lilun Zhang ◽

Gang Du ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Ensemble Monte Carlo ◽

Full Band ◽

Self Consistent ◽

Intel Mic ◽

Monte Carlo Device Simulation

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Modeling the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.766886 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1207-1211 ◽

Cited By ~ 1

Author(s):

S.A. Wartenberg ◽

C.R. Westgate

Keyword(s):

Silicon Germanium ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Temperature Dependent

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A quantum correction based on schrodinger equation applied to Monte Carlo device simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.809431 ◽

2003 ◽

Vol 50 (2) ◽

pp. 440-446 ◽

Cited By ~ 89

Author(s):

B. Winstead ◽

U. Ravaioli

Keyword(s):

Monte Carlo ◽

Schrödinger Equation ◽

Schrodinger Equation ◽

Quantum Correction ◽

Device Simulation ◽

Monte Carlo Device Simulation

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Physical models of ohmic contact for Monte Carlo device simulation

Solid-State Electronics ◽

10.1016/0038-1101(95)00188-3 ◽

1996 ◽

Vol 39 (4) ◽

pp. 555-562 ◽

Cited By ~ 53

Author(s):

Tomás González ◽

Daniel Pardo

Keyword(s):

Monte Carlo ◽

Ohmic Contact ◽

Device Simulation ◽

Physical Models ◽

Monte Carlo Device Simulation

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