Performance Characterization, Repeatability, and Consistency of X-Band GaN HEMTs Prior to High Temperature RF Reliability Testing

2006 ◽  
Author(s):  
Roland Shaw ◽  
David Sanderlin ◽  
Jansen DeJulio
Keyword(s):  
High Temperature ◽  
Reliability Testing ◽  
Performance Characterization ◽  
X Band ◽  
Gan Hemts

Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy

1997 ◽  
Vol 483 ◽  
Author(s):  
R. Hickman ◽  
J. M. Van Hove ◽  
P. P. Chow ◽  
J. J. Klaassen ◽  
A. M. Wowchack ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Nitrogen Plasma ◽  
Atomic Nitrogen ◽  
Maximum Frequency ◽  
Temperature Performance ◽  
X Band ◽  
Dual Gate ◽  
Process Uniformity ◽  
Gan Hemts

AbstractX-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.

High temperature dielectric loss of h-BN at X band and its dependence on the electron structure, defects and impurities

2010 ◽  
Vol 12 (9) ◽  
pp. 1599-1602 ◽  
Author(s):  
Ting Zhang ◽  
Mengqiang Wu ◽  
Shuren Zhang ◽  
Jinming Wang ◽  
Dahai Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Loss ◽  
Electron Structure ◽  
Structure Defects ◽  
X Band ◽  
Defects And Impurities

Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy

1998 ◽  
Vol 42 (12) ◽  
pp. 2183-2185 ◽  
Author(s):  
R Hickman ◽  
J.M Van Hove ◽  
P.P Chow ◽  
J.J Klaassen ◽  
A.M Wowchack ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Performance ◽  
X Band

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

2022 ◽  
pp. 1-5
Author(s):  
Yajie Xin ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Xiaochuan Deng ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Channel ◽  
Channel Power ◽  
Gan Hemts

High temperature reliability testing of aluminum and tantalum electrolytic capacitors

2002 ◽  
Vol 42 (6) ◽  
pp. 835-840 ◽  
Author(s):  
A. Dehbi ◽  
W. Wondrak ◽  
Y. Ousten ◽  
Y. Danto
Keyword(s):  
High Temperature ◽  
Reliability Testing ◽  
Electrolytic Capacitors

High Temperature Analog-to-Digital Converter Reliability Testing

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000245-000252 ◽  
Author(s):  
Bruce W. Ohme ◽  
Mark R. Larson
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Reliability Testing ◽  
Test Results ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Life Test ◽  
Analog To Digital ◽  
Post Stress

Initial test results have been previously reported for a high-temperature (225°C) 12-bit analog-to-digital converter (HTADC12) fabricated using a production high-temperature silicon-on-insulator (SOI) CMOS process and assembled in hermetically sealed ceramic packages (ref. 1). Reliability test results for the HTADC12 are presented including parametric and functional test results from 1500 hours of dynamic life test at 250°C as well 1000 temperature cycles from −65°C to 200°C. Results of post-stress wirebond, and die bond testing are also provided.

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1667-1671 ◽  
Author(s):  
M. Dammann ◽  
M. Baeumler ◽  
P. Brückner ◽  
W. Bronner ◽  
S. Maroldt ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Stress Test ◽  
High Temperature Stress ◽  
Gan Hemts
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