Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy
Keyword(s):
X Band
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AbstractX-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.
1998 ◽
Vol 42
(12)
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pp. 2183-2185
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1996 ◽
Vol 35
(Part 1, No. 11)
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pp. 5711-5713
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2006 ◽
Vol 50
(3)
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pp. 511-513
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2008 ◽
Vol 51
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pp. 105-110
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