Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

Author(s):  
F.L. Duan ◽  
D.E. Ioannou ◽  
W.C. Jenkins ◽  
H.L. Hughes ◽  
M.S.T. Liu
1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK

2021 ◽  
Vol 68 (4) ◽  
pp. 1804-1809
Author(s):  
Bernhard Ruch ◽  
Gregor Pobegen ◽  
Tibor Grasser

2008 ◽  
Vol 48 (4) ◽  
pp. 508-513 ◽  
Author(s):  
Qingxue Wang ◽  
Lanxia Sun ◽  
Andrew Yap

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