LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's

1997 ◽  
Vol 44 (6) ◽  
pp. 972-977 ◽  
Author(s):  
F.L. Duan ◽  
S.P. Sinha ◽  
D.E. Ioannou ◽  
F.T. Brady
1993 ◽  
Vol 22 (1-4) ◽  
pp. 407-410 ◽  
Author(s):  
O. Faynot ◽  
S. Cristoloveanu ◽  
A.-J. Auberton-Hervé ◽  
G. Reimbold

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK

2021 ◽  
Vol 68 (4) ◽  
pp. 1804-1809
Author(s):  
Bernhard Ruch ◽  
Gregor Pobegen ◽  
Tibor Grasser

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