Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs

2002 ◽  
Author(s):  
S. Aritome ◽  
R. Kirisawa ◽  
T. Endoh ◽  
R. Nakayama ◽  
R. Shirota ◽  
...  
Keyword(s):  
Data Retention ◽  
Retention Characteristics

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

Data retention characteristics of Bi3.25La0.75Ti3O12 thin films on conductive SrRuO3 electrodes

2007 ◽  
Vol 91 (14) ◽  
pp. 142901 ◽  
Author(s):  
Jang-Sik Lee ◽  
B. S. Kang ◽  
Q. X. Jia
Keyword(s):  
Thin Films ◽  
Data Retention ◽  
Retention Characteristics

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

scholarly journals Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

2020 ◽  
Vol 1 ◽  
pp. 163-169
Author(s):  
Hyangwoo Kim ◽  
Hyeonsu Cho ◽  
Byoung Don Kong ◽  
Jin-Woo Kim ◽  
Meyya Meyyappan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Retention Characteristics

Gate stress effect on low temperature data retention characteristics of split-gate flash memories

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1331-1336 ◽  
Author(s):  
Ling-Chang Hu ◽  
An-Chi Kang ◽  
Eric Chen ◽  
J.R. Shih ◽  
Yao-Feng Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Data ◽  
Stress Effect ◽  
Data Retention ◽  
Flash Memories ◽  
Retention Characteristics

scholarly journals Memristors With Controllable Data Volatility by Loading Metal Ion-Added Ionic Liquids

2021 ◽  
Vol 3 ◽  
Author(s):  
Hiroshi Sato ◽  
Hisashi Shima ◽  
Toshiki Nokami ◽  
Toshiyuki Itoh ◽  
Yusei Honma ◽  
...  
Keyword(s):  
Metal Ion ◽  
Electronic Device ◽  
Material Design ◽  
Device Fabrication ◽  
Corrosion Mechanism ◽  
Data Retention ◽  
Resistance Change ◽  
Device Resistance ◽  
Wide Range ◽  
Retention Characteristics

We demonstrate a new memristive device (IL-Memristor), in which an ionic liquid (IL) serve as a material to control the volatility of the resistance. ILs are ultra-low vapor pressure liquids consisting of cations and anions at room temperature, and their introduction into solid-state processes can provide new avenues in electronic device fabrication. Because the device resistance change in IL-Memristor is governed by a Cu filament formation/rupture in IL, we considered that the Cu filament stability affects the data retention characteristics. Therefore, we controlled the data retention time by clarifying the corrosion mechanism and performing the IL material design based on the results. It was found out that the corrosion of Cu filaments in the IL was ruled by the comproportionation reaction, and that the data retention characteristics of the devices varied depending on the valence of Cu ions added to the IL. Actually, IL-Memristors involving Cu(II) and Cu(I) show volatile and non-volatile nature with respect to the programmed resistance value, respectively. Our results showed that data volatility can be controlled through the metal ion species added to the IL. The present work indicates that IL-memristor is suitable for unique applications such as artificial neuron with tunable fading characteristics that is applicable to phenomena with a wide range of timescale.

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