Data retention characteristics of Bi3.25La0.75Ti3O12 thin films on conductive SrRuO3 electrodes

2007 ◽  
Vol 91 (14) ◽  
pp. 142901 ◽  
Author(s):  
Jang-Sik Lee ◽  
B. S. Kang ◽  
Q. X. Jia
Keyword(s):  
Thin Films ◽  
Data Retention ◽  
Retention Characteristics

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge

Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs

2002 ◽  
Author(s):  
S. Aritome ◽  
R. Kirisawa ◽  
T. Endoh ◽  
R. Nakayama ◽  
R. Shirota ◽  
...  
Keyword(s):  
Data Retention ◽  
Retention Characteristics

scholarly journals Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory

2020 ◽  
Vol 1 ◽  
pp. 163-169
Author(s):  
Hyangwoo Kim ◽  
Hyeonsu Cho ◽  
Byoung Don Kong ◽  
Jin-Woo Kim ◽  
Meyya Meyyappan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Retention Characteristics

Retention characteristics of Pb(Zr, Ti)O3 films deposited by various methods for high-density non-volatile memory

2002 ◽  
Vol 748 ◽  
Author(s):  
Sangmin Shin ◽  
Mirko Hofmann ◽  
Yong Kyun Lee ◽  
Choong Rae Cho ◽  
June Key Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Passive Layer ◽  
High Density ◽  
Organic Chemical ◽  
Interfacial Layers ◽  
Retention Loss ◽  
Non Volatile Memory ◽  
Retention Characteristics ◽  
Volatile Memory

ABSTRACTRetention loss is a significant issue for an application of ferroelectric thin films to high-density non-volatile memory devices. We investigated the polarization retention characteristics of ferroelectric Pb(Zr,Ti)O3 (PZT) thin films which were fabricated on Pt/IrO2/Ir substrates by different deposition methods. In thermally-accelerated retention failure tests, Pb(Zr,Ti)O3 (PZT) films which were prepared by a chmeical solution deposition (CSD) method showed rapid decay of retained polarization charges as the films became thinner down to 1000 Å, while the films which were grown by metal organic chemical vapor deposition (MOCVD) showed relatively large nonvolatile charges at the same thickness. We concluded that in the CSD-grown films, the relatively large interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of this layer was larger in MOCVD-grown films. It means that the possibility of the accumulation of space charges at the interface was reduced, so that less imprint and less retention loss could be observed in the MOCVD-grown films.

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