scholarly journals Enhancement of the reverse-bias second breakdown capability of high-voltage power transistors by using emitter-open turn off

1980 ◽  
Vol 68 (10) ◽  
pp. 1348-1349 ◽  
Author(s):  
D.Y. Chen ◽  
B. Jackson
Keyword(s):  
High Voltage ◽  
Reverse Bias ◽  
Power Transistors

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

2014 ◽  
Vol 64 (8) ◽  
pp. 45-52
Author(s):  
S. A. Suliman ◽  
O. O. Awadelkarim ◽  
J. Hao ◽  
M. Rioux
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Gate Oxides ◽  
Power Transistors

EBIC and XTEM Analysis of High Voltage SMOS Reliability Failures

2002 ◽  
Vol 716 ◽  
Author(s):  
Larry Rice
Keyword(s):  
High Voltage ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Operating Conditions ◽  
Oxide Semiconductor ◽  
Power Transistors ◽  
Area Of Interest ◽  
Transmission Electron

AbstractMicroscopists are faced with many challenges in locating and examining failure sites in the ever-shrinking semiconductor device. The site must be located using electrical characterization techniques like electron beam induced current (EBIC), photo emission microscopy (PEM) or liquid crystal (LC) and then cross-sectioned with a focused ion beam (FIB). Both PEM and LC require the semiconductor circuit to be running near operating conditions which has been observed to locally melt the area of interest, frequently destroying evidence of the failure mechanism. In contrast, EBIC typically can be accomplished at low or no applied voltage eliminating further damage to the circuit. EBIC has been applied to locate leakage sites in high voltage metal oxide semiconductor (MOS) electro static discharge (ESD) reliability failures. In addition to a brief revisit of the basic principles of EBIC and describing a technique to successfully cross section ‘hot spots’ for transmission electron microscopy (TEM) observation, focus will be placed on a case study of the reliability testing failure analysis of ESD power transistors using EBIC, SEM, focused ion beam (FIB), and XTEM.

Reverse bias instabilities in bipolar power transistors with cellular layout

2001 ◽  
Vol 48 (11) ◽  
pp. 2544-2550 ◽  
Author(s):  
G. Busatto ◽  
L. Fratelli ◽  
G. Vitale
Keyword(s):  
Reverse Bias ◽  
Power Transistors ◽  
Cellular Layout

High-Temperature Self-Supplied Isolated Driver Module for GaN Power Transistors

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000116-000121
Author(s):  
Xavier Baie ◽  
Vincent Dessard ◽  
René Escoffier ◽  
Fabien Laplace ◽  
Gonzalo Picun
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Single Channel ◽  
Power Transistors ◽  
Hybrid Module

Abstract In this paper, a compact isolated and self-supplied single channel driver module for operation at 200C (392F) is presented. It is aimed to drive a normally-on GaN device within a high voltage half bridge topology. The driver is implemented on a compact hybrid module. Two of such modules are then assembled on a dedicated half-bridge DBC with two GaN devices.

High-Voltage and Power Transistors

2019 ◽  
pp. 307-388
Author(s):  
Badih El-Kareh ◽  
Lou N. Hutter
Keyword(s):  
High Voltage ◽  
Power Transistors

scholarly journals Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

2002 ◽  
Vol 389-393 ◽  
pp. 1289-1292 ◽  
Author(s):  
K. Isoird ◽  
Mihai Lazar ◽  
Marie Laure Locatelli ◽  
Christophe Raynaud ◽  
Dominique Planson ◽  
...  
Keyword(s):  
High Voltage ◽  
Reverse Bias ◽  
Bipolar Diodes
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