Reverse bias instabilities in bipolar power transistors with cellular layout

2001 ◽  
Vol 48 (11) ◽  
pp. 2544-2550 ◽  
Author(s):  
G. Busatto ◽  
L. Fratelli ◽  
G. Vitale
Keyword(s):  
Reverse Bias ◽  
Power Transistors ◽  
Cellular Layout

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

2014 ◽  
Vol 64 (8) ◽  
pp. 45-52
Author(s):  
S. A. Suliman ◽  
O. O. Awadelkarim ◽  
J. Hao ◽  
M. Rioux
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Gate Oxides ◽  
Power Transistors

scholarly journals Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2316
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Karen Geens ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Power Conversion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Analysis ◽  
Power Transistors ◽  
Trench Structure ◽  
Effect Transistor ◽  
Gan On Si

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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