High-Temperature Self-Supplied Isolated Driver Module for GaN Power Transistors

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000116-000121
Author(s):  
Xavier Baie ◽  
Vincent Dessard ◽  
René Escoffier ◽  
Fabien Laplace ◽  
Gonzalo Picun
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Single Channel ◽  
Power Transistors ◽  
Hybrid Module

Abstract In this paper, a compact isolated and self-supplied single channel driver module for operation at 200C (392F) is presented. It is aimed to drive a normally-on GaN device within a high voltage half bridge topology. The driver is implemented on a compact hybrid module. Two of such modules are then assembled on a dedicated half-bridge DBC with two GaN devices.

An Environmental Wet Cell For High Voltage Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 18-19
Author(s):  
N.J. Tighe ◽  
H.M. Flower ◽  
P.R. Swann
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Image Quality ◽  
Inelastic Scattering ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Environmental Cell ◽  
Water Saturated ◽  
High Temperature Gas

A differentially pumped environmental cell has been developed for use in the AEI EM7 million volt microscope. In the initial version the column of gas traversed by the beam was 5.5mm. This permited inclusion of a tilting hot stage in the cell for investigating high temperature gas-specimen reactions. In order to examine specimens in the wet state it was found that a pressure of approximately 400 torr of water saturated helium was needed around the specimen to prevent dehydration. Inelastic scattering by the water resulted in a sharp loss of image quality. Therefore a modified cell with an ‘airgap’ of only 1.5mm has been constructed. The shorter electron path through the gas permits examination of specimens at the necessary pressure of moist helium; the specimen can still be tilted about the side entry rod axis by ±7°C to obtain stereopairs.

nCocktail Therapy towards High Temperature/High Voltage Lithium Metal Battery via Solvation Sheath Structure Tuning

2021 ◽  
Author(s):  
Tianle Zheng ◽  
Jianwei Xiong ◽  
Xiaotang Shi ◽  
Bingying Zhu ◽  
Ya-Jun Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Lithium Metal ◽  
Lithium Metal Battery ◽  
Sheath Structure

scholarly journals Biocompatible and biodegradable solid polymer electrolytes for high voltage and high temperature lithium batteries

RSC Advances ◽  
2017 ◽  
Vol 7 (40) ◽  
pp. 24856-24863 ◽  
Author(s):  
Yue Lin ◽  
Yun Cheng ◽  
Jie Li ◽  
Jan D. Miller ◽  
Jin Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Wheat Flour ◽  
High Voltage ◽  
Lithium Batteries ◽  
Polymer Electrolytes ◽  
Solid Polymer Electrolytes ◽  
Solid Polymer

Wheat flour modified solid polymer electrolytes were synthesized and used in high safety and long cycling lithium batteries.

Thermal Hydraulic Studies of a Fluoride Salt Cooled High Temperature Test Reactor With Different CFD Methods

2014 ◽  
Author(s):  
Chenglong Wang ◽  
Yao Xiao ◽  
Jianjun Zhou ◽  
Dalin Zhang ◽  
Suizheng Qiu ◽  
...  
Keyword(s):  
High Temperature ◽  
Channel Model ◽  
Single Channel ◽  
Fluoride Salt ◽  
Applied Physics ◽  
Local Flow ◽  
Single Channel Analysis ◽  
Test Reactor ◽  
Safety Operation ◽  
Temperature Test

The Fluoride-salt-cooled High temperature Reactor (FHR) is new reactor concept-about a decade old which is mainly on going in China and U.S. The preliminary thermal-hydraulic studies of the Fluoride salt cooled High temperature Test Reactor (FHTR) is necessary for the development of the FHR technology. In this paper, the thermal-hydraulics of FHTR (also called TMSR-SF) designed by Shanghai Instituted of Applied Physics (SINAP) is studied in different power modes. The temperature distributions of the coolant and the fuel pebble are obtained using a steady-state thermal-hydraulic analysis code for FHR. The comprehensive local flow and heat transfer are investigated by computational fluid dynamics (CFD) for the locations where may have the maximum pebble temperature based on the results from single channel analysis. The profiles of temperature, velocity, pressure and Nu of the coolant on the surface of the pebble as well as the temperature distribution of a fuel pebble are obtained and analyzed. Numerical results showed that the results of 3-D simulation are in reasonable agreement with that of single channel model and also illustrated safety operation of the preliminary designed TMSR-SF in different power mode.

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

2014 ◽  
Vol 64 (8) ◽  
pp. 45-52
Author(s):  
S. A. Suliman ◽  
O. O. Awadelkarim ◽  
J. Hao ◽  
M. Rioux
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Gate Oxides ◽  
Power Transistors

Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs

2013 ◽  
Vol 60 (7) ◽  
pp. 2217-2223 ◽  
Author(s):  
Puneet Srivastava ◽  
Jo Das ◽  
Robert P. Mertens ◽  
Gustaaf Borghs
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Silicon Substrate

An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET

2007 ◽  
Author(s):  
M. A Huque ◽  
R. Vijayaraghavan ◽  
M. Zhang ◽  
B. J. Blalock ◽  
L M. Tolbert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Gate Driver

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

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