Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

2001 ◽  
Vol 22 (11) ◽  
pp. 527-529 ◽  
Author(s):  
Pei-Jer Tzeng ◽  
Yi-Yuan Chang ◽  
Kuei-Shu Chang-Liao
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Insulator ◽  
Mos Devices ◽  
High Dielectric

Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

2004 ◽  
Vol 95 (1) ◽  
pp. 316-322 ◽  
Author(s):  
Guangming Wang ◽  
Daniel Moses ◽  
Alan J. Heeger ◽  
Hong-Mei Zhang ◽  
Mux Narasimhan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
High Dielectric

Polymer thin-film transistor based on a high dielectric constant gate insulator

2007 ◽  
Vol 16 (4) ◽  
pp. 1145-1149 ◽  
Author(s):  
Lü Wen ◽  
Peng Jun-Biao ◽  
Yang Kai-Xia ◽  
Lan Lin-Feng ◽  
Niu Qiao-Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Polymer Thin Film ◽  
High Dielectric

Enhanced performance of supercapacitors by constructing a “mini parallel-plate capacitor” in an electrode with high dielectric constant materials

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Carbon Fiber ◽  
Parallel Plate ◽  
Sandwich Structure ◽  
High Dielectric Constant ◽  
Parallel Plate Capacitor ◽  
Plate Capacitor ◽  
Fiber Metal ◽  
High Dielectric ◽  
Mini Plate

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.

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