scholarly journals High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

2010 ◽  
Vol 22 (17) ◽  
pp. 1941-1945 ◽  
Author(s):  
Lei Liao ◽  
Jingwei Bai ◽  
Yung-Chen Lin ◽  
Yongquan Qu ◽  
Yu Huang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Performance ◽  
High Dielectric Constant ◽  
Gate Dielectrics ◽  
Graphene Nanoribbon ◽  
Oxide Nanowires ◽  
High Dielectric

High performance dielectric composites by latex compounding of graphene oxide-encapsulated carbon nanosphere hybrids with XNBR

2014 ◽  
Vol 2 (29) ◽  
pp. 11144-11154 ◽  
Author(s):  
Ming Tian ◽  
Qin Ma ◽  
Xiaolin Li ◽  
Liqun Zhang ◽  
Toshio Nishi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Elastic Modulus ◽  
High Performance ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Low Dielectric ◽  
Low Elastic Modulus ◽  
High Dielectric ◽  
Latex Compounding

A novel dielectric composite with high dielectric constant (k), low dielectric loss, low elastic modulus and large actuated strain at a low electric field was prepared by a simple, low-cost and efficient method.

Progress in nitrile-based polymer electrolytes for high performance lithium batteries

2016 ◽  
Vol 4 (26) ◽  
pp. 10070-10083 ◽  
Author(s):  
Pu Hu ◽  
Jingchao Chai ◽  
Yulong Duan ◽  
Zhihong Liu ◽  
Guanglei Cui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
High Voltage ◽  
Lithium Batteries ◽  
Polymer Electrolytes ◽  
High Performance ◽  
Recent Progress ◽  
High Dielectric Constant ◽  
Lithium Ions ◽  
High Dielectric

Nitrile-based polymer electrolytes have unique characteristics such as a high dielectric constant, high anodic oxidization potential and favorable interaction with lithium ions. Recent progress in nitrile-based polymer electrolytes has been reviewed in terms of their potential application in flexible, solid-state or high voltage lithium batteries in this paper.

scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Sol Gel ◽  
High Mobility ◽  
Dielectric Films ◽  
Solution Processed ◽  
High Dielectric ◽  
P Type

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Performance and Reliability of thin Gate Dielectrics for VLSI: Materials and Processing Perspective

1986 ◽  
Vol 71 ◽  
Author(s):  
R. Singh
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectrics ◽  
Current Trends ◽  
High Dielectric ◽  
Rapid Isothermal Processing ◽  
Gate Dielectric Material

AbstractCurrent trends are in the direction of submicron MOSFETs employing gate dielectrics in the thickness range of about 30 - 100A°. The performance and reliability of submicron MOSFETs can be improved by using high dielectric constant gate dielectric material. A new concept involving 2 or more dielectric material is proposed in this paper. In- situ rapid isothermal processing is proposed for the fabrication of thin gate dielectrics.

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