Comparison of Electrical and Reliability Characteristics of Different Tunnel Oxides in SONOS Flash Memory

2006 ◽  
Author(s):  
Jia-Lin Wu ◽  
Hua-Ching Chien ◽  
Chien-Wei Liao ◽  
Cheng-Yen Wu ◽  
Chih-Yuan Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Reliability Characteristics ◽  
Tunnel Oxides

Impact of Channel Dangling Bonds on Reliability Characteristics of Flash Memory on Poly-Si Thin Films

2007 ◽  
Vol 28 (4) ◽  
pp. 267-269 ◽  
Author(s):  
Yu-Hsien Lin ◽  
Chao-Hsin Chien ◽  
Tung-Huan Chou ◽  
Tien-Sheng Chao ◽  
Tan-Fu Lei
Keyword(s):  
Thin Films ◽  
Flash Memory ◽  
Dangling Bonds ◽  
Reliability Characteristics

Highly Reliable N2O-Oxynitrided Tunnel Oxides for Flash Memory

1994 ◽  
Author(s):  
Masahiro Ushiyama ◽  
Masataka Kato ◽  
Tetsuo Adachi ◽  
Hitoshi Kume ◽  
Naoki Miyamoto ◽  
...  
Keyword(s):  
Flash Memory ◽  
Tunnel Oxides

Investigation of reoxidation mechanisms in nitrided tunnel oxides for Flash memory applications

2011 ◽  
Vol 88 (7) ◽  
pp. 1186-1188
Author(s):  
N. Breil ◽  
L. Cassagnard ◽  
C. Arsac ◽  
R. Duru ◽  
G. Briend
Keyword(s):  
Flash Memory ◽  
Memory Applications ◽  
Tunnel Oxides

Improvement of reliability characteristics using the N2 implantation in SOHOS flash memory

2010 ◽  
Author(s):  
Jeong-Gyu Park ◽  
Jae-Sub Oh ◽  
Seung-Dong Yang ◽  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Reliability Characteristics

Nitrogen Profile Engineering for Tunnel Oxynitrides

1999 ◽  
Vol 567 ◽  
Author(s):  
Taro Sugizaki ◽  
Yoko Tada ◽  
Ken-Ichi Hikazutani ◽  
Toshiro Nakanishi ◽  
Kanetake Takasaki
Keyword(s):  
Flash Memory ◽  
Optimum Conditions ◽  
Data Retention ◽  
Flash Memories ◽  
Key Technology ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Retention Characteristics ◽  
Oxide Trap ◽  
Tunnel Oxides

ABSTRACTWe consider nitrogen profiling in oxynitrides to be the key technology for next generation Flash Memories, because of its ability to suppress the generation of traps in tunnel oxides. We are trying to develop an oxynitriding technique for tunnel oxides that uses nitric monooxide. This time, we tried to control nitrogen profile in oxynitrides by using reoxidized oxynitride process. By using a three- step oxidationoxynitridation-reoxidation process, we attempted to systematically tune oxidation conditions, to obtain a satisfactory tunnel oxide/Si interface and SILC characteristics. Highly reliable tunnel oxide for flash memory has been achieved using recently developed reoxidized oxynitrides processing, which is characterized by wet oxidationoxynitridation-dry oxidation. This process yields excellent characteristics, such as low oxide trap formation, low leakage current, and high charge to breakdown (Qbd). This three-step oxynitride process is best suited for flash memories having superior Program/Erase (P/E) cycling endurance and data retention characteristics. In addition, I will propose the optimum conditions for the reoxidation process.

scholarly journals Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation

Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1828
Author(s):  
Jae-Min Sim ◽  
Bong-Seok Kim ◽  
In-Ho Nam ◽  
Yun-Heub Song
Keyword(s):  
Flash Memory ◽  
The Self ◽  
Memory Structure ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Back Gate ◽  
Reliability Characteristics ◽  
Channel Potential ◽  
Stacking Structure

A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual slope compared with a conventional GAA NAND structure, which leads to excellent reliability characteristics in program disturbance, pass disturbance and oxide break down issue. As a result, the GAAB structure is expected to be appropriate for a high stacking structure of future memory structure.

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