Impact of Channel Dangling Bonds on Reliability Characteristics of Flash Memory on Poly-Si Thin Films

2007 ◽  
Vol 28 (4) ◽  
pp. 267-269 ◽  
Author(s):  
Yu-Hsien Lin ◽  
Chao-Hsin Chien ◽  
Tung-Huan Chou ◽  
Tien-Sheng Chao ◽  
Tan-Fu Lei
Keyword(s):  
Thin Films ◽  
Flash Memory ◽  
Dangling Bonds ◽  
Reliability Characteristics

The Effect of Hydrogen on the Structure of Amorphous and Microcrystalline Sic Prepared by the Polymer Route

1989 ◽  
Vol 164 ◽  
Author(s):  
C-J Chu ◽  
S-J. Ting ◽  
F. Bobonneau ◽  
J.D. Mackenzie
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Amorphous Phase ◽  
Polymer Solutions ◽  
Mas Nmr ◽  
Organic Polymer ◽  
Dangling Bonds ◽  
Double Bonds ◽  
Metal Organic

AbstractAmorphous SiC:H thin films have been deposited on different substrates using metal-organic polymer solutions. The structure of the amorphous phase has been proposed as the rings of Si and C atoms with various sizes. Microcrystalline phase can be produced when fired at temperatures higher than 1000°C. 13C MAS-NMR shows the evidence of the C=C-double bonds. ESR results show the major defects in this material are C-dangling bonds. As predict, defects can be decreased by heat treatment in H2 atmosphere.

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

2013 ◽  
Vol 13 (1) ◽  
pp. 93-97 ◽  
Author(s):  
Stefan Mueller ◽  
Johannes Muller ◽  
Uwe Schroeder ◽  
Thomas Mikolajick
Keyword(s):  
Thin Films ◽  
Reliability Characteristics ◽  
Memory Applications
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