A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

2005 ◽  
Vol 17 (10) ◽  
pp. 2041-2043 ◽  
Author(s):  
L.W. Snyman ◽  
H. Aharoni ◽  
Monuko du Plessis
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Silicon Cmos

scholarly journals Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Jinchai Li ◽  
Kai Huang ◽  
Guozhen Liu ◽  
Yinghui Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Transport ◽  
Defect Density ◽  
Numerical Study ◽  
Structure Design ◽  
Operating Conditions ◽  
Hole Injection ◽  
Electron Blocking Layer ◽  
Recombination Processes

AbstractHere we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density.Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

Studies on carrier lifetime in heavily doped InGaAsP

1993 ◽  
Vol 71 (11-12) ◽  
pp. 582-585
Author(s):  
S. S. De ◽  
A. K. Ghosh ◽  
M. Bera ◽  
A. K. Hazra ◽  
J. C. Haldar
Keyword(s):  
Numerical Analysis ◽  
Band Structure ◽  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Lifetime ◽  
Bandgap Narrowing ◽  
Doping Effects ◽  
Heavily Doped ◽  
Heavy Doping

A model is developed to study the carrier lifetime and quantum efficiency in heavily doped InGaAsP. In the analysis, bandgap narrowing, carrier degeneracy, and nonparabolicity of the band structure are considered as heavy doping effects. The variations of carrier lifetime and quantum efficiency with nominal current density at a given temperature are studied through numerical analysis.

Efficient phenanthroimidazole-styryl-triphenylamine derivatives for blue OLEDs: a combined experimental and theoretical study

2017 ◽  
Vol 41 (6) ◽  
pp. 2443-2457 ◽  
Author(s):  
Venugopal Thanikachalam ◽  
Elayaperumal Sarojpurani ◽  
Jayaraman Jayabharathi ◽  
Palanivel Jeeva
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
External Quantum Efficiency ◽  
Power Efficiency ◽  
Theoretical Study ◽  
Blue Emission ◽  
Cie Coordinates

Blue emitting devices based on 2-(4′-9H-carbazol-9-yl)-[1,1′-styryl]-4-yl-1-benzylpiperidine-1H-phenanthro[9,10-d]imidazole (Cz-BPIS) exhibits blue emission with CIE coordinates of (0.16, 0.09), current density of 1.91 cd/A, power efficiency of 1.63 lm/W and external quantum efficiency of 2.61%.

Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

2015 ◽  
Vol 58 (5) ◽  
pp. 641-645 ◽  
Author(s):  
I. A. Prudaev ◽  
V. V. Kopyev ◽  
I. S. Romanov ◽  
V. N. Brudnyi
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Gan Led

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm)

2010 ◽  
Vol 44 (10) ◽  
pp. 1370-1374 ◽  
Author(s):  
M. A. Ladugin ◽  
A. V. Lyutetskiy ◽  
A. A. Marmalyuk ◽  
A. A. Padalitsa ◽  
N. A. Pikhtin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Semiconductor Lasers ◽  
Quantum Efficiency ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density

scholarly journals Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 88
Author(s):  
Xingfei Zhang ◽  
Yan Li ◽  
Zhicong Li ◽  
Zhenlin Miao ◽  
Meng Liang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Injection ◽  
High Current ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Size Dependent

Versatile applications call for InGaN-based light-emitting diodes (LEDs) to operate at ultra-high current densities with high quantum efficiency. In this work, we investigated the size-dependent effects of the electrical and optical performance of LEDs as increasing the current density up to 100 A/cm2, which demonstrated that mini-strip flip-chip LEDs were superior option to achieve better performance. In detail, at a current density of 100 A/cm2, the light output power density of these mini-strip LEDs was improved by about 6.1 W/cm2, leading to an improvement in the wall-plug efficiency by 4.23%, while the operating temperature was reduced by 11.3 °C, as compared with the large-sized LEDs. This could be attributed to the increase in the sidewall light extraction, alleviated current crowding effect, and improved heat dissipation. This work suggests an array of mini-strip LEDs would provide an option in achieving higher luminescent efficiency at ultrahigh current injection conditions for various applications.

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