Influence of AlxGa1−xAs layer thickness on threshold current density and differential quantum efficiency for GaAs−AlxGa1−xAs DH lasers

1975 ◽  
Vol 46 (3) ◽  
pp. 1393-1395 ◽  
Author(s):  
H. C. Casey ◽  
M. B. Panish
2010 ◽  
Vol 44 (10) ◽  
pp. 1370-1374 ◽  
Author(s):  
M. A. Ladugin ◽  
A. V. Lyutetskiy ◽  
A. A. Marmalyuk ◽  
A. A. Padalitsa ◽  
N. A. Pikhtin ◽  
...  

Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
Ю.М. Шерняков ◽  
Г.О. Корнышов ◽  
...  

AbstractThe main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm^2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and 0.9 cm^–1), respectively.


1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai

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