Increasing the efficiency of three terminal silicon CMOS LED's through current density and carrier injection techniques

2005 ◽  
Author(s):  
L.W. Snyman ◽  
J.M. Matjila ◽  
H. Aharoni ◽  
M. du Plessis
Keyword(s):  
Current Density ◽  
Carrier Injection ◽  
Injection Techniques ◽  
Silicon Cmos

InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3295-3300 ◽  
Author(s):  
Jin-Kwon Park ◽  
Jae-Hoon Han ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Current Density ◽  
Direct Reaction ◽  
Carrier Injection ◽  
Zn Diffusion ◽  
Optical Attenuation ◽  
Variable Optical Attenuator ◽  
Low Temperature Process ◽  
Injection Current Density

ABSTRACTIn this study, we successfully demonstrate a carrier-injection InGaAsP variable optical attenuator (VOA) with a lateral P-I-N junction formed by Ni-InGaAsP alloy and Zn diffusion on a III-V on insulator (III-V-OI) wafer. The Ni-InGaAsP alloy for the n+ junction is formed by direct reaction between Ni and InGaAsP after annealing at 350°C. The p+ junction is formed by the Zn diffusion at 500°C using Zn doped spin-on glass (SOG). By both techniques, we successfully reduce the sheet and contact resistivity in the lateral P-I-N junction even with the relatively low-temperature process as compared with the P-I-N junction formed by conventional Si and Be ion implantation. By injecting carriers into the InGaAsP waveguide through the lateral P-I-N junction, we achieve the optical attenuation of -40 dB/mm with an injection current density of 40 mA/mm at a 1.55 μm wavelength.

A dependency of quantum efficiency of silicon CMOS n/sup +/pp/sup +/ LEDs on current density

2005 ◽  
Vol 17 (10) ◽  
pp. 2041-2043 ◽  
Author(s):  
L.W. Snyman ◽  
H. Aharoni ◽  
Monuko du Plessis
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Silicon Cmos

Solution-deposited ZnO-organic diodes with high current density and high frequency rectification under ambient conditions

2007 ◽  
Vol 1035 ◽  
Author(s):  
Bhola N Pal ◽  
Jia Sun ◽  
Byung Jun Jung ◽  
Howard E Katz
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Schottky Diodes ◽  
Dip Coating ◽  
Carrier Injection ◽  
Ambient Conditions ◽  
Ito Glass ◽  
Maximum Current ◽  
Organic Diodes ◽  
Frequency Rectification

Abstractn-ZnO/p-Pentacene and n-ZnO/poly(bis(dodecyl)quaterthiophene) (p-PQT-12) vertical p-n junction diodes were prepared on ITO-coated glass. A continuous film of ZnO nanoparticles was grown on the ITO glass by dip-coating and subsequent heat treatment of a zinc acetate film. Pentacene was then thermally evaporated to form the ZnO/Pentacene diode, whereas PQT-12 was spin coated for the ZnO/PQT-12 diode. Based on the band energies of ZnO, pentacene and PQT-12, for efficient carrier injection, gold was chosen as the top electrode to complement the ITO for both diodes. The microstructures of ZnO and pentacene films are studied by AFM and show a layer of pentacene grains with about twice the extent of the underlying layer of ZnO grains, implying substantial interfacial contact between them The current density-voltage (J-V) measurement shows that the maximum current density for ZnO/Pentacene and ZnO/PQT12 are 160 A/cm2 and 350 A/cm2 respectively. The rectification was characterized by observation of full input-half output waves. Data indicate that these devices can operate up to frequencies of 20 MHz and 9 MHz for ZnO/Pentacene and ZnO/PQT12, respectively, under ambient environment conditions. This rectification frequency is higher than other reported organic and polymer Schottky diodes under these conditions. Turn on voltages of these diodes are also much lower than for the reported organic and polymer diodes.

Activated Prominences; Mechanisms for Activation and Eruption

1979 ◽  
Vol 44 ◽  
pp. 307-313
Author(s):  
D.S. Spicer
Keyword(s):  
Pressure Gradient ◽  
Density Gradient ◽  
Current Density ◽  
Convective Instability ◽  
Tearing Mode ◽  
Magnetic Shear ◽  
Long Wavelength ◽  
Ideal Mhd ◽  
Gradient Change ◽  
Accelerated Particles

A possible relationship between the hot prominence transition sheath, increased internal turbulent and/or helical motion prior to prominence eruption and the prominence eruption (“disparition brusque”) is discussed. The associated darkening of the filament or brightening of the prominence is interpreted as a change in the prominence’s internal pressure gradient which, if of the correct sign, can lead to short wavelength turbulent convection within the prominence. Associated with such a pressure gradient change may be the alteration of the current density gradient within the prominence. Such a change in the current density gradient may also be due to the relative motion of the neighbouring plages thereby increasing the magnetic shear within the prominence, i.e., steepening the current density gradient. Depending on the magnitude of the current density gradient, i.e., magnetic shear, disruption of the prominence can occur by either a long wavelength ideal MHD helical (“kink”) convective instability and/or a long wavelength resistive helical (“kink”) convective instability (tearing mode). The long wavelength ideal MHD helical instability will lead to helical rotation and thus unwinding due to diamagnetic effects and plasma ejections due to convection. The long wavelength resistive helical instability will lead to both unwinding and plasma ejections, but also to accelerated plasma flow, long wavelength magnetic field filamentation, accelerated particles and long wavelength heating internal to the prominence.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

Microstructure Development in a High Current Density NbTi Superconducting Composite

1985 ◽  
Vol 43 ◽  
pp. 186-189
Author(s):  
P. J. Lee ◽  
D. C. Larbalestier
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Cold Drawing ◽  
Heat Treatments ◽  
Grain Structure ◽  
Fine Grain ◽  
Boundary Film ◽  
Quantitative Basis ◽  
Cold Worked ◽  
Very High

Several features of the metallurgy of superconducting composites of Nb-Ti in a Cu matrix are of interest. The cold drawing strains are generally of order 8-10, producing a very fine grain structure of diameter 30-50 nm. Heat treatments of as little as 3 hours at 300 C (∼ 0.27 TM) produce a thin (1-3 nm) Ti-rich grain boundary film, the precipitate later growing out at triple points to 50-100 nm dia. Further plastic deformation of these larger a-Ti precipitates by strains of 3-4 produces an elongated ribbon morphology (of order 3 x 50 nm in transverse section) and it is the thickness and separation of these precipitates which are believed to control the superconducting properties. The present paper describes initial attempts to put our understanding of the metallurgy of these heavily cold-worked composites on a quantitative basis. The composite studied was fabricated in our own laboratory, using six intermediate heat treatments. This process enabled very high critical current density (Jc) values to be obtained. Samples were cut from the composite at many processing stages and a report of the structure of a number of these samples is made here.

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