Higher efficiency silicon CMOS light-emitting devices (450nm - 750nm) using current density and carrier injection techniques

2005 ◽  
Author(s):  
Lukas W. Snyman ◽  
Monuko du Plessis ◽  
Herzl Aharoni
Keyword(s):  
Current Density ◽  
Carrier Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Injection Techniques ◽  
Silicon Cmos

Efficiency Enhancement of Tandem Organic Light-Emitting Devices Fabricated Utilizing an 1,4,5,8,9,11-Hexaazatriphenylene-Hexacarbonitrile Charge-Generation Layer

2015 ◽  
Vol 15 (10) ◽  
pp. 7717-7721
Author(s):  
Young Pyo Jeon ◽  
Tae Whan Kim
Keyword(s):  
Current Density ◽  
Efficiency Enhancement ◽  
Charge Generation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Maximum Current ◽  
Organic Light Emitting Devices ◽  
Generation Mechanisms ◽  
A Charge

The electrical and the optical properties of tandem organic light-emitting devices (OLEDs) with stacked electroluminescence units were investigated to clarify the charge-generation mechanisms due to the existence of a charge-generation layer (CGL). The current density of the current limited devices with an 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) CGL was 35% higher than that of devices with a tungsten-oxide (WO3) CGL. The maximum current density of the current limited devices with a HAT-CN CGL was as high as 259 mA/cm2. The brightness of the tandem OLEDs with a HAT-CN CGL was 15% higher than that of the tandem OLEDs with a WO3 CGL due to an increase in the current density. The charge-generation mechanisms of tandem OLEDs with a CGL were described on the basis of the experimental results.

scholarly journals Charge Carrier Injection and Transport in PPV Light Emitting Devices

1997 ◽  
Vol 84 (1-3) ◽  
pp. 677-678 ◽  
Author(s):  
W. Brütting ◽  
E. Buchwald ◽  
G. Egerer ◽  
M. Meier ◽  
K. Zuleeg ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Charge Carrier Injection

Luminescence Properties in Er,O-codoped GaAs Light-Emitting Devices with Double Excitation Mechanism

2008 ◽  
Vol 1111 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Kei Fujii ◽  
Ayafumi Fujita ◽  
Yuji Ota ◽  
Yoshiaki Ito ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Energy Separation ◽  
Emission Region ◽  
Lasing Wavelength ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Er Doping ◽  
Ultrafast Carrier

AbstractWe fabricated a laser diode (LD) exhibiting a lasing from strained GaInAs quantum wells (QWs) embedded in Er,O-codoped GaAs (GaAs:Er,O) by organometallic vapor phase epitaxy (OMVPE). The lasing wavelength was designed to tune to the energy separation between the second excited states 4I11/2 and the ground state 4I15/2 of Er3+ ions. The threshold current for the lasing at room temperature was six times larger than that of a GaInAs QW-LD without Er doping, reflecting ultrafast carrier capture by an Er-related trap in GaAs:Er,O. The Er intensity revealed initially steep increase with injected current density in the region for spontaneous emission from the GaInAs QWs. In the stimulated QW emission region, the intensity continued to increase with the current density.

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