Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

2018 ◽  
Vol 39 (2) ◽  
pp. 300-303 ◽  
Author(s):  
Daewoong Kwon ◽  
Korok Chatterjee ◽  
Ava J. Tan ◽  
Ajay K. Yadav ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Influence of molecular weight on the short-channel effect in polymer-based field-effect transistors

2011 ◽  
Vol 50 (2) ◽  
pp. 117-124 ◽  
Author(s):  
Ali Veysel Tunc ◽  
Bernhard Ecker ◽  
Zekeriya Dogruyol ◽  
Sabrina Jüchter ◽  
Ahmet Lütfi Ugur ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

2018 ◽  
Vol 30 (28) ◽  
pp. 1800932 ◽  
Author(s):  
Xingqiang Liu ◽  
Renrong Liang ◽  
Guoyun Gao ◽  
Caofeng Pan ◽  
Chunsheng Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance

scholarly journals Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ali Naderi ◽  
S. Mohammad Noorbakhsh ◽  
Hossein Elahipanah
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Simulation ◽  
Subthreshold Swing ◽  
Short Channel ◽  
Principal Characteristics ◽  
Channel Effects ◽  
Consistent Solution ◽  
Drain Conductance

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by employing the self-consistent solution of 2D Poisson-Schrödinger equations within the nonequilibrium Green's function (NEGF) formalism. Principal characteristics of CNTFETs such as current capability, drain conductance, transconductance, and subthreshold swing (SS) have been investigated. Simulation results present that as temperature raises from 250 to 500 K, the drain conductance and on-current of the CNTFET improved; meanwhile the on-/off-current ratio deteriorated due to faster growth in off-current. Also the effects of temperature on short channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and threshold voltage roll-off have been studied. Results show that the subthreshold swing and DIBL parameters are almost linearly correlated, so the degradation of these parameters has the same origin and can be perfectly influenced by the temperature.

Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors

2019 ◽  
Vol 66 (10) ◽  
pp. 4148-4150 ◽  
Author(s):  
Wenjing Song ◽  
Yi Li ◽  
Kai Zhang ◽  
Xuming Zou ◽  
Jingli Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

2020 ◽  
Vol 32 (46) ◽  
pp. 2005353
Author(s):  
Yang Wang ◽  
Xiaoyuan Bai ◽  
Junwei Chu ◽  
Hongbo Wang ◽  
Gaofeng Rao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance
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